Effects of source access resistance on gate lag in AlGaN/GaN HEMTs and current slump behavior

K. Horio, A. Nakajima, K. Itagaki

研究成果: Conference contribution

1 引用 (Scopus)
元の言語English
ホスト出版物のタイトル65th DRC Device Research Conference
ページ67-68
ページ数2
DOI
出版物ステータスPublished - 2007 12 1
イベント65th DRC Device Research Conference - South Bend, India
継続期間: 2007 6 182007 6 20

出版物シリーズ

名前65th DRC Device Research Conference

Conference

Conference65th DRC Device Research Conference
India
South Bend
期間07/6/1807/6/20

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

これを引用

Horio, K., Nakajima, A., & Itagaki, K. (2007). Effects of source access resistance on gate lag in AlGaN/GaN HEMTs and current slump behavior. : 65th DRC Device Research Conference (pp. 67-68). [4373653] (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373653