Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.
|出版ステータス||Published - 2002 12月 1|
|イベント||2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) - , Slovakia|
継続期間: 2002 6月 30 → 2002 7月 5
|Conference||2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)|
|Period||02/6/30 → 02/7/5|
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