Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

Y. Mitani, A. Wakabayashi, K. Horio

研究成果: Paper

抜粋

Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

元の言語English
ページ284-287
ページ数4
出版物ステータスPublished - 2002 12 1
イベント2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) - , Slovakia
継続期間: 2002 6 302002 7 5

Conference

Conference2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)
Slovakia
期間02/6/3002/7/5

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Mitani, Y., Wakabayashi, A., & Horio, K. (2002). Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. 284-287. 論文発表場所 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002), Slovakia.