Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

Y. Mitani, A. Wakabayashi, Kazushige Horio

研究成果: Conference contribution

抄録

Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

元の言語English
ホスト出版物のタイトルIEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
ページ284-287
ページ数4
出版物ステータスPublished - 2002
イベント2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) -
継続期間: 2002 6 302002 7 5

Other

Other2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)
期間02/6/3002/7/5

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Surface states
Electric breakdown

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Mitani, Y., Wakabayashi, A., & Horio, K. (2002). Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. : IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (pp. 284-287)

Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. / Mitani, Y.; Wakabayashi, A.; Horio, Kazushige.

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. 2002. p. 284-287.

研究成果: Conference contribution

Mitani, Y, Wakabayashi, A & Horio, K 2002, Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. : IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. pp. 284-287, 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002), 02/6/30.
Mitani Y, Wakabayashi A, Horio K. Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. : IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. 2002. p. 284-287
Mitani, Y. ; Wakabayashi, A. ; Horio, Kazushige. / Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. 2002. pp. 284-287
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