TY - JOUR
T1 - Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate
AU - Arulkumaran, S.
AU - Miyoshi, M.
AU - Egawa, T.
AU - Ishikawa, H.
AU - Jimbo, T.
PY - 2003/8/1
Y1 - 2003/8/1
N2 - AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated and the uniformity of dc properties were studied for the first time on 4-in diameter sapphire substrate. A quarter of 4-in diameter AlGaN/GaN epitaxial wafer was used for the uniformity studies of HEMTs. The observed average maximum drain current density, extrinsic transconductance and threshold voltage values for HEMTs were 515 mA/mm, 197 mS/mm, and -2.30 V with standard deviations 9.34%, 4.82%, and 6.52%, respectively. The uniformity of Hall mobility across the 4-in wafer was 1322 cm2/Vs with a standard deviation of 4.27%. The uniformity of sheet resistance across 4-in diameter wafer, measured using Hall Effect was 575 Ω/sq. with a standard deviation 9.01%. The uniformity of HEMTs dc properties are in good correlation with the electrical characteristics of AlGaN/GaN heterostructures, which was obtained from the Hall Effect and capacitance-voltage (C-V) measurements.
AB - AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated and the uniformity of dc properties were studied for the first time on 4-in diameter sapphire substrate. A quarter of 4-in diameter AlGaN/GaN epitaxial wafer was used for the uniformity studies of HEMTs. The observed average maximum drain current density, extrinsic transconductance and threshold voltage values for HEMTs were 515 mA/mm, 197 mS/mm, and -2.30 V with standard deviations 9.34%, 4.82%, and 6.52%, respectively. The uniformity of Hall mobility across the 4-in wafer was 1322 cm2/Vs with a standard deviation of 4.27%. The uniformity of sheet resistance across 4-in diameter wafer, measured using Hall Effect was 575 Ω/sq. with a standard deviation 9.01%. The uniformity of HEMTs dc properties are in good correlation with the electrical characteristics of AlGaN/GaN heterostructures, which was obtained from the Hall Effect and capacitance-voltage (C-V) measurements.
KW - 4-in sapphire
KW - Aluminum gallium nitride
KW - Gallium nitride
KW - HEMTs
KW - MOCVD
KW - Uniformity
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U2 - 10.1109/LED.2003.815162
DO - 10.1109/LED.2003.815162
M3 - Article
AN - SCOPUS:0041886629
VL - 24
SP - 497
EP - 499
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 8
ER -