抄録
We have observed the electrical conduction properties of silicon carbide (SiC) that was locally modified by femtosecond laser. The current-voltage (I-V) characteristics of laser-modified regions were measured. Intriguingly, when the polarization of the laser beam was parallel to the scanning direction, the resistance of the modified region decreased with increasing the irradiated fluence. The resistance of the region irradiated at a fluence of 86 J /cm 2 decreased by more than six orders of magnitude compared with the non-irradiated one. In contrast, when the polarization of the laser beam was perpendicular to the scanning direction, the resistance of the modified region did not show the significant reduction. From the scanning electron microscope observations and Raman spectroscopy, we suppose that the difference of the resistance for each polarization direction is due to the difference of the chemical composition generated in laser modified region.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 16-20 |
| ページ数 | 5 |
| ジャーナル | Journal of Laser Micro Nanoengineering |
| 巻 | 7 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | Published - 2012 2 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Industrial and Manufacturing Engineering
- Instrumentation
- Electrical and Electronic Engineering
これを引用
Electrical conduction properties of SiC modified by femtosecond laser. / Ito, Takuto; Deki, Manato; Tomita, Takuro; Matsuo, Shigeki; Hashimoto, Shuichi; Kitada, Takahiro; Isu, Toshiro; Onoda, Shinobu; Ohshima, Takeshi.
：: Journal of Laser Micro Nanoengineering, 巻 7, 番号 1, 02.2012, p. 16-20.研究成果: Article
}
TY - JOUR
T1 - Electrical conduction properties of SiC modified by femtosecond laser
AU - Ito, Takuto
AU - Deki, Manato
AU - Tomita, Takuro
AU - Matsuo, Shigeki
AU - Hashimoto, Shuichi
AU - Kitada, Takahiro
AU - Isu, Toshiro
AU - Onoda, Shinobu
AU - Ohshima, Takeshi
PY - 2012/2
Y1 - 2012/2
N2 - We have observed the electrical conduction properties of silicon carbide (SiC) that was locally modified by femtosecond laser. The current-voltage (I-V) characteristics of laser-modified regions were measured. Intriguingly, when the polarization of the laser beam was parallel to the scanning direction, the resistance of the modified region decreased with increasing the irradiated fluence. The resistance of the region irradiated at a fluence of 86 J /cm 2 decreased by more than six orders of magnitude compared with the non-irradiated one. In contrast, when the polarization of the laser beam was perpendicular to the scanning direction, the resistance of the modified region did not show the significant reduction. From the scanning electron microscope observations and Raman spectroscopy, we suppose that the difference of the resistance for each polarization direction is due to the difference of the chemical composition generated in laser modified region.
AB - We have observed the electrical conduction properties of silicon carbide (SiC) that was locally modified by femtosecond laser. The current-voltage (I-V) characteristics of laser-modified regions were measured. Intriguingly, when the polarization of the laser beam was parallel to the scanning direction, the resistance of the modified region decreased with increasing the irradiated fluence. The resistance of the region irradiated at a fluence of 86 J /cm 2 decreased by more than six orders of magnitude compared with the non-irradiated one. In contrast, when the polarization of the laser beam was perpendicular to the scanning direction, the resistance of the modified region did not show the significant reduction. From the scanning electron microscope observations and Raman spectroscopy, we suppose that the difference of the resistance for each polarization direction is due to the difference of the chemical composition generated in laser modified region.
KW - Electrical conduction properties
KW - Femtosecond laser
KW - Raman spectroscopy.
KW - Ripple
KW - Silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=84861709466&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861709466&partnerID=8YFLogxK
U2 - 10.2961/jlmn.2012.01.0003
DO - 10.2961/jlmn.2012.01.0003
M3 - Article
AN - SCOPUS:84861709466
VL - 7
SP - 16
EP - 20
JO - Journal of Laser Micro Nanoengineering
JF - Journal of Laser Micro Nanoengineering
SN - 1880-0688
IS - 1
ER -