Electrical conduction properties of SiC modified by femtosecond laser

Takuto Ito, Manato Deki, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima

研究成果: Article

2 引用 (Scopus)

抄録

We have observed the electrical conduction properties of silicon carbide (SiC) that was locally modified by femtosecond laser. The current-voltage (I-V) characteristics of laser-modified regions were measured. Intriguingly, when the polarization of the laser beam was parallel to the scanning direction, the resistance of the modified region decreased with increasing the irradiated fluence. The resistance of the region irradiated at a fluence of 86 J /cm 2 decreased by more than six orders of magnitude compared with the non-irradiated one. In contrast, when the polarization of the laser beam was perpendicular to the scanning direction, the resistance of the modified region did not show the significant reduction. From the scanning electron microscope observations and Raman spectroscopy, we suppose that the difference of the resistance for each polarization direction is due to the difference of the chemical composition generated in laser modified region.

元の言語English
ページ(範囲)16-20
ページ数5
ジャーナルJournal of Laser Micro Nanoengineering
7
発行部数1
DOI
出版物ステータスPublished - 2012 2
外部発表Yes

Fingerprint

Ultrashort pulses
Silicon carbide
silicon carbides
Polarization
Scanning
conduction
Laser beams
lasers
scanning
fluence
polarization
Lasers
laser beams
Raman spectroscopy
Electron microscopes
chemical composition
electron microscopes
Electric potential
Chemical analysis
electric potential

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Instrumentation
  • Electrical and Electronic Engineering

これを引用

Electrical conduction properties of SiC modified by femtosecond laser. / Ito, Takuto; Deki, Manato; Tomita, Takuro; Matsuo, Shigeki; Hashimoto, Shuichi; Kitada, Takahiro; Isu, Toshiro; Onoda, Shinobu; Ohshima, Takeshi.

:: Journal of Laser Micro Nanoengineering, 巻 7, 番号 1, 02.2012, p. 16-20.

研究成果: Article

Ito, T, Deki, M, Tomita, T, Matsuo, S, Hashimoto, S, Kitada, T, Isu, T, Onoda, S & Ohshima, T 2012, 'Electrical conduction properties of SiC modified by femtosecond laser', Journal of Laser Micro Nanoengineering, 巻. 7, 番号 1, pp. 16-20. https://doi.org/10.2961/jlmn.2012.01.0003
Ito, Takuto ; Deki, Manato ; Tomita, Takuro ; Matsuo, Shigeki ; Hashimoto, Shuichi ; Kitada, Takahiro ; Isu, Toshiro ; Onoda, Shinobu ; Ohshima, Takeshi. / Electrical conduction properties of SiC modified by femtosecond laser. :: Journal of Laser Micro Nanoengineering. 2012 ; 巻 7, 番号 1. pp. 16-20.
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abstract = "We have observed the electrical conduction properties of silicon carbide (SiC) that was locally modified by femtosecond laser. The current-voltage (I-V) characteristics of laser-modified regions were measured. Intriguingly, when the polarization of the laser beam was parallel to the scanning direction, the resistance of the modified region decreased with increasing the irradiated fluence. The resistance of the region irradiated at a fluence of 86 J /cm 2 decreased by more than six orders of magnitude compared with the non-irradiated one. In contrast, when the polarization of the laser beam was perpendicular to the scanning direction, the resistance of the modified region did not show the significant reduction. From the scanning electron microscope observations and Raman spectroscopy, we suppose that the difference of the resistance for each polarization direction is due to the difference of the chemical composition generated in laser modified region.",
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AU - Ito, Takuto

AU - Deki, Manato

AU - Tomita, Takuro

AU - Matsuo, Shigeki

AU - Hashimoto, Shuichi

AU - Kitada, Takahiro

AU - Isu, Toshiro

AU - Onoda, Shinobu

AU - Ohshima, Takeshi

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N2 - We have observed the electrical conduction properties of silicon carbide (SiC) that was locally modified by femtosecond laser. The current-voltage (I-V) characteristics of laser-modified regions were measured. Intriguingly, when the polarization of the laser beam was parallel to the scanning direction, the resistance of the modified region decreased with increasing the irradiated fluence. The resistance of the region irradiated at a fluence of 86 J /cm 2 decreased by more than six orders of magnitude compared with the non-irradiated one. In contrast, when the polarization of the laser beam was perpendicular to the scanning direction, the resistance of the modified region did not show the significant reduction. From the scanning electron microscope observations and Raman spectroscopy, we suppose that the difference of the resistance for each polarization direction is due to the difference of the chemical composition generated in laser modified region.

AB - We have observed the electrical conduction properties of silicon carbide (SiC) that was locally modified by femtosecond laser. The current-voltage (I-V) characteristics of laser-modified regions were measured. Intriguingly, when the polarization of the laser beam was parallel to the scanning direction, the resistance of the modified region decreased with increasing the irradiated fluence. The resistance of the region irradiated at a fluence of 86 J /cm 2 decreased by more than six orders of magnitude compared with the non-irradiated one. In contrast, when the polarization of the laser beam was perpendicular to the scanning direction, the resistance of the modified region did not show the significant reduction. From the scanning electron microscope observations and Raman spectroscopy, we suppose that the difference of the resistance for each polarization direction is due to the difference of the chemical composition generated in laser modified region.

KW - Electrical conduction properties

KW - Femtosecond laser

KW - Raman spectroscopy.

KW - Ripple

KW - Silicon carbide

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