In this paper, the authors studied anatase TiO2 films, fabricated by using atomic layer deposition and postdeposition annealing (PDA). The as-grown TiO2 films were of high purity; the carbon and nitrogen contents were within the x-ray photoelectron spectroscopy detection limit of 3-5 at. %. The anatase TiO2 film fabricated by PDA at 500°C in O2 had a very high dielectric constant of >30 and was of high quality because it exhibited no hysteresis at its flatband voltage (V fb) and contained negligible defect charge. The positive V fb shift of anatase TiO2 (0.08 V), caused by the bottom interface dipole at a TiO2/SiO2 interface, was much smaller than those of Al2O3 (0.72 V) and HfO2 (0.29 V). However, the maximum Vfb change of the anatase TiO 2 was greater than those of HfO2 and HfSiOx because the TiO2 contained more oxygen than the other materials.
|ジャーナル||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版ステータス||Published - 2014 5月|
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