TY - JOUR
T1 - Electrical property and structural analysis of amphoteric impurity Ge doped GaSe crystal grown by liquid phase growth
AU - Sato, Y.
AU - Zhao, S.
AU - Maeda, K.
AU - Tanabe, T.
AU - Oyama, Y.
PY - 2017/6/1
Y1 - 2017/6/1
N2 - In order to improve conversion efficiency of THz wave generation, Germanium (Ge)-doped gallium selenide (GaSe) single crystals have been grown by Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP). In this article, electrical property and lattice constant of Ge doped GaSe (GaSe:Ge) crystal are compared with that of not-intentionally doped GaSe crystal. Compared with non-doped GaSe crystal, carrier concentration p was decreased by Ge-doping (not-intentionally doped GaSe p=3.2×1015 cm−3 at 255 K, GaSe:Ge p=4.9×1014 cm−3 at 255 K). In addition, it has been confirmed that lattice constant of GaSe crystal increased with doping Ge concentration increased.
AB - In order to improve conversion efficiency of THz wave generation, Germanium (Ge)-doped gallium selenide (GaSe) single crystals have been grown by Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP). In this article, electrical property and lattice constant of Ge doped GaSe (GaSe:Ge) crystal are compared with that of not-intentionally doped GaSe crystal. Compared with non-doped GaSe crystal, carrier concentration p was decreased by Ge-doping (not-intentionally doped GaSe p=3.2×1015 cm−3 at 255 K, GaSe:Ge p=4.9×1014 cm−3 at 255 K). In addition, it has been confirmed that lattice constant of GaSe crystal increased with doping Ge concentration increased.
KW - A2. Growth from solutions
KW - B1. Gallium compounds
KW - B2. Nonlinear optic materials
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U2 - 10.1016/j.jcrysgro.2017.02.036
DO - 10.1016/j.jcrysgro.2017.02.036
M3 - Article
AN - SCOPUS:85015419842
VL - 467
SP - 34
EP - 37
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -