Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Takahiro Ishizaki, Daisuke Yata, Akio Fuwa

研究成果: Article

12 引用 (Scopus)

抜粋

Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

元の言語English
ページ(範囲)1583-1587
ページ数5
ジャーナルMaterials Transactions
44
発行部数8
DOI
出版物ステータスPublished - 2003 8
外部発表Yes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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