Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology

T.Osaka T.Osaka, N.Takano N.Takano, T.Kurokawa T.Kurokawa, T.Kaneko T.Kaneko, K.Ueno K.Ueno, Kazuyoshi Ueno

研究成果: Article › 査読

本文言語	English
ページ（範囲）	573-578
ジャーナル	Journal of the Electrochemical Society
巻	149
出版ステータス	Published - 2002 11 1

引用スタイル

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title = "Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology",

author = "T.Osaka T.Osaka and N.Takano N.Takano and T.Kurokawa T.Kurokawa and T.Kaneko T.Kaneko and K.Ueno K.Ueno and Kazuyoshi Ueno",

year = "2002",

month = nov,

day = "1",

language = "English",

volume = "149",

pages = "573--578",

journal = "Journal of the Electrochemical Society",

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TY - JOUR

T1 - Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology

AU - T.Osaka, T.Osaka

AU - N.Takano, N.Takano

AU - T.Kurokawa, T.Kurokawa

AU - T.Kaneko, T.Kaneko

AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

PY - 2002/11/1

Y1 - 2002/11/1

M3 - Article

VL - 149

SP - 573

EP - 578

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

ER -