Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology

T.Osaka T.Osaka, N.Takano N.Takano, T.Kurokawa T.Kurokawa, T.Kaneko T.Kaneko, K.Ueno K.Ueno, Kazuyoshi Ueno

研究成果: Article

元の言語English
ページ(範囲)573-578
ジャーナルJournal of the Electrochemical Society
149
出版物ステータスPublished - 2002 11 1

これを引用

Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology. / T.Osaka, T.Osaka; N.Takano, N.Takano; T.Kurokawa, T.Kurokawa; T.Kaneko, T.Kaneko; K.Ueno, K.Ueno; Ueno, Kazuyoshi.

:: Journal of the Electrochemical Society, 巻 149, 01.11.2002, p. 573-578.

研究成果: Article

T.Osaka, T.Osaka ; N.Takano, N.Takano ; T.Kurokawa, T.Kurokawa ; T.Kaneko, T.Kaneko ; K.Ueno, K.Ueno ; Ueno, Kazuyoshi. / Electroless nickel ternally alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology. :: Journal of the Electrochemical Society. 2002 ; 巻 149. pp. 573-578.
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AU - T.Kaneko, T.Kaneko

AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

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