Electron injection assisted phase transition in a nano-Au-VO2 junction

Gang Xu, C. M. Huang, Masato Tazawa, Ping Jin, D. M. Chen, L. Miao

研究成果: Article査読

53 被引用数 (Scopus)

抄録

The semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2.

本文言語English
論文番号061911
ジャーナルApplied Physics Letters
93
6
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Electron injection assisted phase transition in a nano-Au-VO<sub>2</sub> junction」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル