Electron mobility on AlGaN/GaN heterostructure interface

G. Y. Zhao, Hiroyasu Ishikawa, T. Egawa, T. Jimbo, M. Umeno

研究成果: Article

14 引用 (Scopus)

抄録

High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.

元の言語English
ページ(範囲)963-966
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
7
発行部数3
DOI
出版物ステータスPublished - 2000 5
外部発表Yes

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Hall mobility
Two dimensional electron gas
Electron mobility
electron mobility
Heterojunctions
Aluminum Oxide
Metallorganic chemical vapor deposition
Chemical analysis
Sapphire
metalorganic chemical vapor deposition
electron gas
Photoluminescence
sapphire
photoluminescence
aluminum gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Electron mobility on AlGaN/GaN heterostructure interface. / Zhao, G. Y.; Ishikawa, Hiroyasu; Egawa, T.; Jimbo, T.; Umeno, M.

:: Physica E: Low-Dimensional Systems and Nanostructures, 巻 7, 番号 3, 05.2000, p. 963-966.

研究成果: Article

Zhao, G. Y. ; Ishikawa, Hiroyasu ; Egawa, T. ; Jimbo, T. ; Umeno, M. / Electron mobility on AlGaN/GaN heterostructure interface. :: Physica E: Low-Dimensional Systems and Nanostructures. 2000 ; 巻 7, 番号 3. pp. 963-966.
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AU - Umeno, M.

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