Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide

T. Tomita, M. Iwami, M. Yamamoto, M. Deki, S. Matsuo, S. Hashimoto, Y. Nakagawa, T. Kitada, T. Isu, S. Saito, K. Sakai, S. Onoda, T. Ohshima

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltagecharacteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 Ωm was obtained for fs-laser modified area.

元の言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2009
ホスト出版物のサブタイトルICSCRM 2009
出版者Trans Tech Publications Ltd
ページ239-242
ページ数4
ISBN(印刷物)0878492798, 9780878492794
DOI
出版物ステータスPublished - 2010 1 1
イベント13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
継続期間: 2009 10 112009 10 16

出版物シリーズ

名前Materials Science Forum
645-648
ISSN(印刷物)0255-5476

Conference

Conference13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Germany
Nurnberg
期間09/10/1109/10/16

    フィンガープリント

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Tomita, T., Iwami, M., Yamamoto, M., Deki, M., Matsuo, S., Hashimoto, S., Nakagawa, Y., Kitada, T., Isu, T., Saito, S., Sakai, K., Onoda, S., & Ohshima, T. (2010). Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. : Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 239-242). (Materials Science Forum; 巻数 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.239