Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide

T. Tomita, M. Iwami, M. Yamamoto, M. Deki, Shigeki Matsuo, S. Hashimoto, Y. Nakagawa, T. Kitada, T. Isu, S. Saito, K. Sakai, S. Onoda, T. Ohshima

研究成果: Conference contribution

3 引用 (Scopus)

抄録

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltagecharacteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 Ωm was obtained for fs-laser modified area.

元の言語English
ホスト出版物のタイトルMaterials Science Forum
出版者Trans Tech Publications Ltd
ページ239-242
ページ数4
645-648
ISBN(印刷物)0878492798, 9780878492794
DOI
出版物ステータスPublished - 2010
外部発表Yes
イベント13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg
継続期間: 2009 10 112009 10 16

出版物シリーズ

名前Materials Science Forum
645-648
ISSN(印刷物)02555476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Nurnberg
期間09/10/1109/10/16

Fingerprint

Ultrashort pulses
Silicon carbide
silicon carbides
Electronic properties
Single crystals
single crystals
electronics
lasers
Laser beam effects
Fourier transform infrared spectroscopy
Metals
Ions
Polarization
Degradation
silicon carbide
Lasers
electric contacts
crystallinity
infrared spectroscopy
degradation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

これを引用

Tomita, T., Iwami, M., Yamamoto, M., Deki, M., Matsuo, S., Hashimoto, S., ... Ohshima, T. (2010). Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. : Materials Science Forum (巻 645-648, pp. 239-242). (Materials Science Forum; 巻数 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.239

Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. / Tomita, T.; Iwami, M.; Yamamoto, M.; Deki, M.; Matsuo, Shigeki; Hashimoto, S.; Nakagawa, Y.; Kitada, T.; Isu, T.; Saito, S.; Sakai, K.; Onoda, S.; Ohshima, T.

Materials Science Forum. 巻 645-648 Trans Tech Publications Ltd, 2010. p. 239-242 (Materials Science Forum; 巻 645-648).

研究成果: Conference contribution

Tomita, T, Iwami, M, Yamamoto, M, Deki, M, Matsuo, S, Hashimoto, S, Nakagawa, Y, Kitada, T, Isu, T, Saito, S, Sakai, K, Onoda, S & Ohshima, T 2010, Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. : Materials Science Forum. 巻. 645-648, Materials Science Forum, 巻. 645-648, Trans Tech Publications Ltd, pp. 239-242, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, 09/10/11. https://doi.org/10.4028/www.scientific.net/MSF.645-648.239
Tomita T, Iwami M, Yamamoto M, Deki M, Matsuo S, Hashimoto S その他. Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. : Materials Science Forum. 巻 645-648. Trans Tech Publications Ltd. 2010. p. 239-242. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.645-648.239
Tomita, T. ; Iwami, M. ; Yamamoto, M. ; Deki, M. ; Matsuo, Shigeki ; Hashimoto, S. ; Nakagawa, Y. ; Kitada, T. ; Isu, T. ; Saito, S. ; Sakai, K. ; Onoda, S. ; Ohshima, T. / Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide. Materials Science Forum. 巻 645-648 Trans Tech Publications Ltd, 2010. pp. 239-242 (Materials Science Forum).
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AU - Deki, M.

AU - Matsuo, Shigeki

AU - Hashimoto, S.

AU - Nakagawa, Y.

AU - Kitada, T.

AU - Isu, T.

AU - Saito, S.

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AU - Onoda, S.

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AB - Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltagecharacteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 Ωm was obtained for fs-laser modified area.

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