Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence

Makoto Fujimaki, Yoshimichi Ohki, Hiroyuki Nishikawa

研究成果: Article査読

44 被引用数 (Scopus)

抄録

The energy states of oxygen-deficient type defects in the vacuum ultraviolet region are discussed based on the experimental results of vacuum ultraviolet absorption, temperature dependence of the photoluminescence (PL) intensities at 4.3 and 3.1 eV, and lifetimes of the PLs. It was found that the oxygen-deficient type glass has a large absorption tail above 6 eV in addition to an absorption band around 5 eV and that the 3.1 eV PL intensity scarcely depends on temperature when excited above 6 eV. It was also found that the lifetime of the 4.3 eV PL is 9 ns and that of the 3.1 eV PL is 113 μs irrespective of the excitation photon energy. The obtained results are explainable by assuming that electrons excited into the conduction band by photons above 6 eV contribute to the PLs.

本文言語English
ページ(範囲)1042-1046
ページ数5
ジャーナルJournal of Applied Physics
81
3
DOI
出版ステータスPublished - 1997 2 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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