TY - JOUR
T1 - Energy transport simulation for graded HBT's
T2 - importance of setting adequate values for transport parameters
AU - Horio, Kazushige
AU - Okada, Tadayuki
AU - Nakatani, Akio
PY - 1999/1/1
Y1 - 1999/1/1
N2 - An energy transport simulation method for graded AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented in which Al composition-, doping density-, and energy-dependences of transport parameters are considered. For several representative Al composition and doping densities, parameters such as electron mobility, energy relaxation time, and upper-valley fraction are evaluated as a function of electron energy by a Monte Carlo method. For the other Al composition, these are determined by a linear interpolation method. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those obtained by using more simplified approaches, demonstrating the importance of giving adequate transport parameters, particularly in analyzing graded band-gap base HBT's.
AB - An energy transport simulation method for graded AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented in which Al composition-, doping density-, and energy-dependences of transport parameters are considered. For several representative Al composition and doping densities, parameters such as electron mobility, energy relaxation time, and upper-valley fraction are evaluated as a function of electron energy by a Monte Carlo method. For the other Al composition, these are determined by a linear interpolation method. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those obtained by using more simplified approaches, demonstrating the importance of giving adequate transport parameters, particularly in analyzing graded band-gap base HBT's.
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U2 - 10.1109/16.753695
DO - 10.1109/16.753695
M3 - Article
AN - SCOPUS:0032650123
SN - 0018-9383
VL - 46
SP - 641
EP - 647
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
ER -