Energy transport simulation for graded HBT's: importance of setting adequate values for transport parameters

Kazushige Horio, Tadayuki Okada, Akio Nakatani

研究成果: Article査読

7 被引用数 (Scopus)

抄録

An energy transport simulation method for graded AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is presented in which Al composition-, doping density-, and energy-dependences of transport parameters are considered. For several representative Al composition and doping densities, parameters such as electron mobility, energy relaxation time, and upper-valley fraction are evaluated as a function of electron energy by a Monte Carlo method. For the other Al composition, these are determined by a linear interpolation method. Calculated cutoff frequency characteristics and electron velocity profiles are compared with those obtained by using more simplified approaches, demonstrating the importance of giving adequate transport parameters, particularly in analyzing graded band-gap base HBT's.

本文言語English
ページ(範囲)641-647
ページ数7
ジャーナルIEEE Transactions on Electron Devices
46
4
DOI
出版ステータスPublished - 1999 1 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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