Enhanced curie temperature and high heat resistivity of PMnN-PZT monocrystalline thin film on Si

Shinya Yoshida, Hiroaki Hanzawa, Kiyotaka Wasa, Shuji Tanaka

研究成果: Article査読

8 被引用数 (Scopus)

抄録

In this study, a c-axis-oriented PMnN-PZT monocrystalline thin film was sputter-deposited on a Si substrate covered with buffer layers. Curie temperature, Tc, was estimated by investigating the temperature variation of the piezoelectric, dielectric, and ferroelectric properties and the crystalline lattice. Estimated Tc is at least 150 °C higher than those of the bulk ceramics. The enhanced Tc is possibly caused by a strong interaction between the thin film and the Si substrate. The piezoelectric and ferroelectric properties were measured before and after heating to >600 °C, and no significant differences were observed, demonstrating excellent heat resistivity. The results of this study give a better material option for high-temperature piezoelectric MEMS.

本文言語English
ページ(範囲)100-107
ページ数8
ジャーナルSensors and Actuators, A: Physical
251
DOI
出版ステータスPublished - 2016 11月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 金属および合金
  • 電子工学および電気工学

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