Enhanced excitonic optical nonlinearity and exciton dynamics in semiconductor microstructures

研究成果: Article

13 引用 (Scopus)

抜粋

The mechanisms of enhanced excitonic optical nonlinearity in semiconductor microstructures are clarified to be easily attainable state filling of discretized levels due to the quantum size effect and the enhanced oscillator strength. The calculated third-order nonlinear susceptibility explains successfully the recent experimental results. A comprehensive interpretation of the exciton dynamics in semiconductor microcrystallites is presented to explain teh fast and slow decay components in phase conjugation and luminescence measurements.

元の言語English
ページ(範囲)590-595
ページ数6
ジャーナルSurface Science
196
発行部数1-3
DOI
出版物ステータスPublished - 1988

    フィンガープリント

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

これを引用