Enhanced excitonic optical nonlinearity and exciton dynamics in semiconductor microstructures

研究成果: Article

12 引用 (Scopus)

抄録

The mechanisms of enhanced excitonic optical nonlinearity in semiconductor microstructures are clarified to be easily attainable state filling of discretized levels due to the quantum size effect and the enhanced oscillator strength. The calculated third-order nonlinear susceptibility explains successfully the recent experimental results. A comprehensive interpretation of the exciton dynamics in semiconductor microcrystallites is presented to explain teh fast and slow decay components in phase conjugation and luminescence measurements.

元の言語English
ページ(範囲)590-595
ページ数6
ジャーナルSurface Science
196
発行部数1-3
DOI
出版物ステータスPublished - 1988
外部発表Yes

Fingerprint

Excitons
nonlinearity
excitons
Semiconductor materials
microstructure
Microstructure
phase conjugation
oscillator strengths
Luminescence
luminescence
magnetic permeability
decay
LDS 751

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

これを引用

@article{81410d3e311446f092dcfa745bb3eab1,
title = "Enhanced excitonic optical nonlinearity and exciton dynamics in semiconductor microstructures",
abstract = "The mechanisms of enhanced excitonic optical nonlinearity in semiconductor microstructures are clarified to be easily attainable state filling of discretized levels due to the quantum size effect and the enhanced oscillator strength. The calculated third-order nonlinear susceptibility explains successfully the recent experimental results. A comprehensive interpretation of the exciton dynamics in semiconductor microcrystallites is presented to explain teh fast and slow decay components in phase conjugation and luminescence measurements.",
author = "Toshihide Takagahara",
year = "1988",
doi = "10.1016/0039-6028(88)90746-7",
language = "English",
volume = "196",
pages = "590--595",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Enhanced excitonic optical nonlinearity and exciton dynamics in semiconductor microstructures

AU - Takagahara, Toshihide

PY - 1988

Y1 - 1988

N2 - The mechanisms of enhanced excitonic optical nonlinearity in semiconductor microstructures are clarified to be easily attainable state filling of discretized levels due to the quantum size effect and the enhanced oscillator strength. The calculated third-order nonlinear susceptibility explains successfully the recent experimental results. A comprehensive interpretation of the exciton dynamics in semiconductor microcrystallites is presented to explain teh fast and slow decay components in phase conjugation and luminescence measurements.

AB - The mechanisms of enhanced excitonic optical nonlinearity in semiconductor microstructures are clarified to be easily attainable state filling of discretized levels due to the quantum size effect and the enhanced oscillator strength. The calculated third-order nonlinear susceptibility explains successfully the recent experimental results. A comprehensive interpretation of the exciton dynamics in semiconductor microcrystallites is presented to explain teh fast and slow decay components in phase conjugation and luminescence measurements.

UR - http://www.scopus.com/inward/record.url?scp=45549118512&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45549118512&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(88)90746-7

DO - 10.1016/0039-6028(88)90746-7

M3 - Article

AN - SCOPUS:45549118512

VL - 196

SP - 590

EP - 595

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -