Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate

Shrikant Saini, Paolo Mele, Hiroaki Honda, Dave J. Henry, Patrick E. Hopkins, Leopoldo Molina-Luna, Kaname Matsumoto, Koji Miyazaki, Ataru Ichinose

研究成果: Article

30 引用 (Scopus)

抄録

2% Al-doped ZnO (AZO) thin films fabricated at 300 °C by pulsed laser deposition (PLD) on amorphous fused silica demonstrated the high quality crystallinity and grain connection, which correlates to the high thermoelectric performance: electrical conductivity σ = 923S/cm and Seebeck coefficient S =-111 μV/K at 600 K. Its power factor (S2 · σ) is 1.2 × 10-3Wm-1K-2, twofold better than films deposited on crystalline SrTiO3 under the same experimental conditions. Using our measured thermal conductivity (κ) at 300K (4.89Wm-1K-1), the figure of merit, ZT = (S2 · σ · T/κ), is calculated as 0.045 at 600 K, 5 times larger than ZT of our previously reported bulk ZnO.

元の言語English
記事番号060306
ジャーナルJapanese Journal of Applied Physics
53
発行部数6
DOI
出版物ステータスPublished - 2014 1 1
外部発表Yes

Fingerprint

Seebeck coefficient
Fused silica
Seebeck effect
Pulsed laser deposition
figure of merit
pulsed laser deposition
crystallinity
Thermal conductivity
thermal conductivity
silicon dioxide
Crystalline materials
Thin films
electrical resistivity
Substrates
coefficients
thin films
Electric Conductivity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Saini, S., Mele, P., Honda, H., Henry, D. J., Hopkins, P. E., Molina-Luna, L., ... Ichinose, A. (2014). Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate. Japanese Journal of Applied Physics, 53(6), [060306]. https://doi.org/10.7567/JJAP.53.060306

Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate. / Saini, Shrikant; Mele, Paolo; Honda, Hiroaki; Henry, Dave J.; Hopkins, Patrick E.; Molina-Luna, Leopoldo; Matsumoto, Kaname; Miyazaki, Koji; Ichinose, Ataru.

:: Japanese Journal of Applied Physics, 巻 53, 番号 6, 060306, 01.01.2014.

研究成果: Article

Saini, S, Mele, P, Honda, H, Henry, DJ, Hopkins, PE, Molina-Luna, L, Matsumoto, K, Miyazaki, K & Ichinose, A 2014, 'Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate', Japanese Journal of Applied Physics, 巻. 53, 番号 6, 060306. https://doi.org/10.7567/JJAP.53.060306
Saini, Shrikant ; Mele, Paolo ; Honda, Hiroaki ; Henry, Dave J. ; Hopkins, Patrick E. ; Molina-Luna, Leopoldo ; Matsumoto, Kaname ; Miyazaki, Koji ; Ichinose, Ataru. / Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate. :: Japanese Journal of Applied Physics. 2014 ; 巻 53, 番号 6.
@article{e6fb63409c2e4caeaa6e970645d1c322,
title = "Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate",
abstract = "2{\%} Al-doped ZnO (AZO) thin films fabricated at 300 °C by pulsed laser deposition (PLD) on amorphous fused silica demonstrated the high quality crystallinity and grain connection, which correlates to the high thermoelectric performance: electrical conductivity σ = 923S/cm and Seebeck coefficient S =-111 μV/K at 600 K. Its power factor (S2 · σ) is 1.2 × 10-3Wm-1K-2, twofold better than films deposited on crystalline SrTiO3 under the same experimental conditions. Using our measured thermal conductivity (κ) at 300K (4.89Wm-1K-1), the figure of merit, ZT = (S2 · σ · T/κ), is calculated as 0.045 at 600 K, 5 times larger than ZT of our previously reported bulk ZnO.",
author = "Shrikant Saini and Paolo Mele and Hiroaki Honda and Henry, {Dave J.} and Hopkins, {Patrick E.} and Leopoldo Molina-Luna and Kaname Matsumoto and Koji Miyazaki and Ataru Ichinose",
year = "2014",
month = "1",
day = "1",
doi = "10.7567/JJAP.53.060306",
language = "English",
volume = "53",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6",

}

TY - JOUR

T1 - Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate

AU - Saini, Shrikant

AU - Mele, Paolo

AU - Honda, Hiroaki

AU - Henry, Dave J.

AU - Hopkins, Patrick E.

AU - Molina-Luna, Leopoldo

AU - Matsumoto, Kaname

AU - Miyazaki, Koji

AU - Ichinose, Ataru

PY - 2014/1/1

Y1 - 2014/1/1

N2 - 2% Al-doped ZnO (AZO) thin films fabricated at 300 °C by pulsed laser deposition (PLD) on amorphous fused silica demonstrated the high quality crystallinity and grain connection, which correlates to the high thermoelectric performance: electrical conductivity σ = 923S/cm and Seebeck coefficient S =-111 μV/K at 600 K. Its power factor (S2 · σ) is 1.2 × 10-3Wm-1K-2, twofold better than films deposited on crystalline SrTiO3 under the same experimental conditions. Using our measured thermal conductivity (κ) at 300K (4.89Wm-1K-1), the figure of merit, ZT = (S2 · σ · T/κ), is calculated as 0.045 at 600 K, 5 times larger than ZT of our previously reported bulk ZnO.

AB - 2% Al-doped ZnO (AZO) thin films fabricated at 300 °C by pulsed laser deposition (PLD) on amorphous fused silica demonstrated the high quality crystallinity and grain connection, which correlates to the high thermoelectric performance: electrical conductivity σ = 923S/cm and Seebeck coefficient S =-111 μV/K at 600 K. Its power factor (S2 · σ) is 1.2 × 10-3Wm-1K-2, twofold better than films deposited on crystalline SrTiO3 under the same experimental conditions. Using our measured thermal conductivity (κ) at 300K (4.89Wm-1K-1), the figure of merit, ZT = (S2 · σ · T/κ), is calculated as 0.045 at 600 K, 5 times larger than ZT of our previously reported bulk ZnO.

UR - http://www.scopus.com/inward/record.url?scp=84903190689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903190689&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.060306

DO - 10.7567/JJAP.53.060306

M3 - Article

AN - SCOPUS:84903190689

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6

M1 - 060306

ER -