Enhanced thermoelectric properties of Al-doped ZnO thin films

P. Mele, S. Saini, H. Abe, H. Honda, K. Matsumoto, K. Miyazaki, H. Hagino, A. Ichinose

研究成果: Conference contribution

抄録

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C - 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 uV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

本文言語English
ホスト出版物のタイトルNanoscale Thermoelectric Materials
ホスト出版物のサブタイトルThermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation
ページ57-64
ページ数8
DOI
出版ステータスPublished - 2013 12 1
外部発表はい
イベント2013 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2013 4 12013 4 5

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1543
ISSN(印刷版)0272-9172

Other

Other2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period13/4/113/4/5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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