Enhancement of performance of Ga incorporated ZnO UV photodetectors prepared by simplified two step chemical solution process

Karuppiah Deva Arun Kumar, Paolo Mele, Prashantha Murahari, Ahmed A. Abdeltawab, Sayed Z. Mohammady, Mohd Ubaidullah, Mohammad Shahzad Samdani, S. AlFaify

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The present study establishes the UV photodetector capability of Zinc Oxide (ZnO) and Gallium incorporated ZnO (GZO) thin films prepared by a simplified two-step chemical bath deposition technique. The prepared UV detectors were characterized by tools such as XRD, SEM, UV, PL and Photoresponse to investigate their properties. The structural study revealed the enhancement of film crystallinity with respect to Ga doping level. The optical studies confirm the higher absorption at UV range for 3% Ga doped ZnO film. From PL study, the green emission observed at 522 nm is associated with the defects from oxygen vacancies (Vo+). Once the UV light is irradiated on the GZO film surface, electrons and holes are generated as the illumination energy is larger than the ZnO bandgap energy, known as above-band energy illumination. The photo-generated holes then neutralize the chemisorbed ions causing the release of electrons in the conduction band of ZnO, this could increase the photocurrent. In this study, the calculated photo-detectivity (D*), responsivity (R) and external quantum efficiency (EQE) of the prepared UV detectors are 1.24 ×1010 jones, 0.38 AW-1, and 125.10% respectively for 3% Ga doped ZnO film. These parameters are noticeable and this study proves that GZO films in fact work as good sensitive UV detectors.

本文言語English
論文番号113217
ジャーナルSensors and Actuators A: Physical
333
DOI
出版ステータスPublished - 2022 1月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 金属および合金
  • 電子工学および電気工学

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