Epitaxial Al Schottky contacts formed on (111) GaAs

Kazuyoshi Ueno, Takayoshi Yoshida, Kazuyuki Hirose

研究成果: Article

3 引用 (Scopus)

抜粋

Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.

元の言語English
ページ(範囲)2204-2206
ページ数3
ジャーナルApplied Physics Letters
56
発行部数22
DOI
出版物ステータスPublished - 1990 12 1
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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