Epitaxial growth of Ba 8 Ga 16 Ge 30 clathrate film on Si substrate by RF helicon magnetron sputtering with evaluation on thermoelectric properties

L. Miao, S. Tanemura, T. Watanabe, M. Tanemura, S. Toh, K. Kaneko, Y. Sugahara, T. Hirayama

研究成果査読

5 被引用数 (Scopus)

抄録

Epitaxial Ba 8 Ga 16 Ge 30 clathrate thin films were successfully grown on Si substrate by using helicon magnetron sputtering. The (1 0 0) lattice of Ba 8 Ga 16 Ge 30 was identified grown on four Si(2 0 0) lattices in small mismatch (0.1%). Both the color of samples and XRD results suggest 600 °C is the optimal substrate temperature for the growth of high quality Ba-Ga-Ge clathrate film on Si substrates. High Seebeck coefficients and electrical resistivities for the deposited clathrate thin films in comparison with those of bulk are obtained. The high crystal quality and thermionic effects in heterostructures may contribute to the larger Seebeck coefficients, while the increasing of interface scattering for electrons probably is the reason for large electrical resistivities. Although the thermoelectric (TE) results are not ideal as designed, our results are significant due to the first successful work on epitaxial growth of Ba 8 Ga 16 Ge 30 clathrate thin films on Si substrate with large Seebeck coefficient.

本文言語English
ページ(範囲)167-172
ページ数6
ジャーナルApplied Surface Science
254
1 SPEC. ISS.
DOI
出版ステータスPublished - 2007 10 31
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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「Epitaxial growth of Ba <sub>8</sub> Ga <sub>16</sub> Ge <sub>30</sub> clathrate film on Si substrate by RF helicon magnetron sputtering with evaluation on thermoelectric properties」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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