The fabrication of ultracompact three dimensional monolithic microwave circuits (MMIC) having a sophisticated three-dimensional (3D) interconnection structure was discussed. The circuits were manufactured using the inductively coupled plasma etching with a double-layer mask, consisting of WSi covered with photoresists containing silicon. The developed method enabled the formation of holes to any levels of interconnections simultaneously. It resulted in smaller chip area, higher performance and greater design flexibility in MMICs.
|ジャーナル||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版ステータス||Published - 2002 5月 1|
|イベント||20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States|
継続期間: 2001 10月 1 → 2001 10月 3
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