Etching method for fabricating ultracompact three-dimensional monolithic microwave integrated circuits

Suehiro Sugitani; Kiyomitsu Onodera; Shinji Aoyama; Makoto Hirano; Masami Tokumitsu

doi:10.1116/1.1479362

Etching method for fabricating ultracompact three-dimensional monolithic microwave integrated circuits

Suehiro Sugitani, Kiyomitsu Onodera, Shinji Aoyama, Makoto Hirano, Masami Tokumitsu

研究成果: Conference article › 査読

2 被引用数 (Scopus)

抄録

The fabrication of ultracompact three dimensional monolithic microwave circuits (MMIC) having a sophisticated three-dimensional (3D) interconnection structure was discussed. The circuits were manufactured using the inductively coupled plasma etching with a double-layer mask, consisting of WSi covered with photoresists containing silicon. The developed method enabled the formation of holes to any levels of interconnections simultaneously. It resulted in smaller chip area, higher performance and greater design flexibility in MMICs.

本文言語	English
ページ（範囲）	1019-1025
ページ数	7
ジャーナル	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
巻	20
号	3
DOI	https://doi.org/10.1116/1.1479362
出版ステータス	Published - 2002 5 1
イベント	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States 継続期間: 2001 10 1 → 2001 10 3

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

文献へのアクセス

10.1116/1.1479362

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引用スタイル

Etching method for fabricating ultracompact three-dimensional monolithic microwave integrated circuits. / Sugitani, Suehiro; Onodera, Kiyomitsu; Aoyama, Shinji; Hirano, Makoto; Tokumitsu, Masami.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 3, 01.05.2002, p. 1019-1025.

研究成果: Conference article › 査読

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