抜粋
The fabrication of ultracompact three dimensional monolithic microwave circuits (MMIC) having a sophisticated three-dimensional (3D) interconnection structure was discussed. The circuits were manufactured using the inductively coupled plasma etching with a double-layer mask, consisting of WSi covered with photoresists containing silicon. The developed method enabled the formation of holes to any levels of interconnections simultaneously. It resulted in smaller chip area, higher performance and greater design flexibility in MMICs.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1019-1025 |
| ページ数 | 7 |
| ジャーナル | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| 巻 | 20 |
| 発行部数 | 3 |
| DOI | |
| 出版物ステータス | Published - 2002 5 1 |
| イベント | 20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States 継続期間: 2001 10 1 → 2001 10 3 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
フィンガープリント Etching method for fabricating ultracompact three-dimensional monolithic microwave integrated circuits' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Sugitani, S., Onodera, K., Aoyama, S., Hirano, M., & Tokumitsu, M. (2002). Etching method for fabricating ultracompact three-dimensional monolithic microwave integrated circuits. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(3), 1019-1025. https://doi.org/10.1116/1.1479362