Evaluation of microscopic structural randomness in SiO2 by analysis of photoluminescence decay profiles

Keisuke Ishii, Kwang Soo Seol, Yoshimichi Ohki, Hiroyuki Nishikawa

研究成果: Article査読

抄録

Microscopic structural randomness in SiO2, a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to oxygen vacancies (≡Si-Si≡). As samples with different degrees of randomness, an ion-implanted thermal SiO2 film, SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared by SIMOX (separation by ion-implanted oxygen), and a bulk silica glass prepared by the soot-remelting method were tested. By analyzing the decay profile with a stretched exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the samples whose infrared absorption properties and HF etch rate suggest greater structural randomness.

本文言語English
ページ(範囲)1-6
ページ数6
ジャーナルElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
119
3
DOI
出版ステータスPublished - 1997
外部発表はい

ASJC Scopus subject areas

  • エネルギー工学および電力技術
  • 電子工学および電気工学

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