Evolution of leakage paths in Hf O2 Si O2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy

K. Kyuno, K. Kita, A. Toriumi

研究成果: Article査読

28 被引用数 (Scopus)

抄録

A conducting atomic force microscopy (C-AFM) in ultrahigh vacuum (UHV) is used to directly observe the evolution of leakage path in Hf O2 Si O2 stacked gate dielectrics. Thanks to the UHV environment, reproducible results for both positive and negative tip biases are obtained without material formation on the surface, which has been a problem for atmospheric C-AFM. It is found that the density of leakage spots increases exponentially as a function of tip bias and that it is a large factor for leakage current increase.

本文言語English
論文番号063510
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
6
DOI
出版ステータスPublished - 2005 2 7
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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