Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

S. Arulkumaran; T. Egawa; G. Zhao; H. Ishikawa; M. Umeno

Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

S. Arulkumaran, T. Egawa, G. Zhao, H. Ishikawa, M. Umeno

研究成果: Paper › 査読

抄録

The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

本文言語	English
ページ	91-92
ページ数	2
出版ステータス	Published - 2001 1月 1
外部発表	はい
イベント	Device Research Conference (DRC) - Notre Dame, IN, United States 継続期間: 2001 6月 25 → 2001 6月 27

Conference

Conference	Device Research Conference (DRC)
国/地域	United States
City	Notre Dame, IN
Period	01/6/25 → 01/6/27

ASJC Scopus subject areas

工学（全般）

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Link to publication in Scopus

引用スタイル

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abstract = "The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.",

author = "S. Arulkumaran and T. Egawa and G. Zhao and H. Ishikawa and M. Umeno",

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T1 - Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

AU - Arulkumaran, S.

AU - Egawa, T.

AU - Zhao, G.

AU - Ishikawa, H.

AU - Umeno, M.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

AB - The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034867156&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034867156

SP - 91

EP - 92

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

抄録

Conference

ASJC Scopus subject areas

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