Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

S. Arulkumaran, T. Egawa, G. Zhao, H. Ishikawa, M. Umeno

研究成果: Paper

抜粋

The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

元の言語English
ページ91-92
ページ数2
出版物ステータスPublished - 2001 1 1
外部発表Yes
イベントDevice Research Conference (DRC) - Notre Dame, IN, United States
継続期間: 2001 6 252001 6 27

Conference

ConferenceDevice Research Conference (DRC)
United States
Notre Dame, IN
期間01/6/2501/6/27

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Arulkumaran, S., Egawa, T., Zhao, G., Ishikawa, H., & Umeno, M. (2001). Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate. 91-92. 論文発表場所 Device Research Conference (DRC), Notre Dame, IN, United States.