The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.
|出版ステータス||Published - 2001 1月 1|
|イベント||Device Research Conference (DRC) - Notre Dame, IN, United States|
継続期間: 2001 6月 25 → 2001 6月 27
|Conference||Device Research Conference (DRC)|
|City||Notre Dame, IN|
|Period||01/6/25 → 01/6/27|
ASJC Scopus subject areas