Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

S. Arulkumaran, T. Egawa, G. Zhao, H. Ishikawa, M. Umeno

研究成果査読

抄録

The epitaxial layers of semiconducting gallium compounds were grown by atmospheric pressure metallorganic chemical vapor deposition (MOCVD). Semiconducting gallium compounds were used to fabricate high electron mobility transistor (HEMT) on semi-insulating silicon carbide substrates. A maximum current density of 867 mA/mm and transconductance of 287 mS/mm was observed for the gate voltage of 0.2 volts.

本文言語English
ページ91-92
ページ数2
出版ステータスPublished - 2001 1 1
外部発表はい
イベントDevice Research Conference (DRC) - Notre Dame, IN, United States
継続期間: 2001 6 252001 6 27

Conference

ConferenceDevice Research Conference (DRC)
国/地域United States
CityNotre Dame, IN
Period01/6/2501/6/27

ASJC Scopus subject areas

  • 工学(全般)

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