Exciton Lasing in ZnO-ZnCr2O4 Nanowalls

Tejendra Dixit, Jitesh Agrawal, Miryala Muralidhar, Masato Murakami, Kolla Lakshmi Ganapathi, Vipul Singh, M. S.Ramachandra Rao

研究成果: Article査読

抄録

We demonstrate low power continuous wave, red and NIR exciton lasing with FWHM of 1 nm, quality factor of 680 and threshold power of 100 μW in ZnO-ZnCr2O4 nanowalls. The NIR lasing was enabled by integrating ZnO with ZnCr2O4. Moreover, wavelength selective photoluminescence (tuning from UV to NIR) and enhanced two-photon emission were also observed in ZnO-ZnCr2O4 nanowalls. The exciton-exciton scattering can be attributed to the observation of exciton lasing at low temperature (<200 K). A plausible mechanism has been elucidated in order to explain the results. This work will open new opportunities in the advancement of oxide semiconductors based exciton lasers.

本文言語English
論文番号8854157
ジャーナルIEEE Photonics Journal
11
6
DOI
出版ステータスPublished - 2019 12

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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