Extension of high fT operation bias range for an AlInAs/InGaAs HBT

S. Tanaka, A. Furukawa, T. Baba, M. Madihian, M. Mizuta, K. Honjo

研究成果: Paper

1 引用 (Scopus)

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The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-fT operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an fT-VCE characteristic with a broad peak at around 2.2 V (VBE = 1.0 V). It was found that the electron transit time tB + tC is insensitive to external voltages. A realistic flat fT-VCE characteristic can be obtained by reducing extrinsic delay time.

元の言語English
ページ175-184
ページ数10
出版物ステータスPublished - 1989 12 1
イベントProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
継続期間: 1989 8 71989 8 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Ithaca, NY, USA
期間89/8/789/8/9

ASJC Scopus subject areas

  • Engineering(all)

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    Tanaka, S., Furukawa, A., Baba, T., Madihian, M., Mizuta, M., & Honjo, K. (1989). Extension of high fT operation bias range for an AlInAs/InGaAs HBT. 175-184. 論文発表場所 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .