The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-fT operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an fT-VCE characteristic with a broad peak at around 2.2 V (VBE = 1.0 V). It was found that the electron transit time tB + tC is insensitive to external voltages. A realistic flat fT-VCE characteristic can be obtained by reducing extrinsic delay time.
|出版ステータス||Published - 1989 12月 1|
|イベント||Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA|
継続期間: 1989 8月 7 → 1989 8月 9
|Other||Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits|
|City||Ithaca, NY, USA|
|Period||89/8/7 → 89/8/9|
ASJC Scopus subject areas