TY - JOUR
T1 - Fabrication and characterization of metal and semiconductor SmS thin films by rf/dc dual magnetron sputtering
AU - Tanemura, S.
AU - Koide, S.
AU - Senzaki, Y.
AU - Miao, L.
AU - Hirai, H.
AU - Mori, Y.
AU - Jin, P.
AU - Kaneko, K.
AU - Terai, A.
AU - Nabatova-Gabain, N.
PY - 2003/5/15
Y1 - 2003/5/15
N2 - SmS thin films have been individually fabricated on either a-SiO/Si or NaCl substrates at a room temperature by dual targets (dc for metal Sm and rf for pressed powdered chalcogenide Sm 2 S 3 ) magnetron sputtering of concurrent power control. The fabricated films were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE), respectively, to identify phase formation, structure, and optical band gap. The followings are summarized: (1) polycrystalline metal, intermedium, or semiconductor SmS thin films were identified by XRD, TEM and the phase formation was achieved by controlling the ratio of dc to rf power; (2) the obtained lattice constant of intermedium phase was 5.85 Å from electron diffraction (ED) and 5.91 Å from lattice image. The former value is contraction by 2% compared with bulk semiconductor (5.97 Å), while the later one is contraction by 1% compared with semiconducting one, although this being probably semiconductor which is suggested by the dominated Sm 2+ valence state in Sm 3d of XPS; (3) XPS depth profile result confirm that metal Sm and samarium oxide exist near the film-substrate boundary in intermedium case, while stoichiometric SmS is dominant at the surface layer; (4) in semiconductor case, optical band gap is 2.67eV obtained by Tauc plot from SE results.
AB - SmS thin films have been individually fabricated on either a-SiO/Si or NaCl substrates at a room temperature by dual targets (dc for metal Sm and rf for pressed powdered chalcogenide Sm 2 S 3 ) magnetron sputtering of concurrent power control. The fabricated films were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE), respectively, to identify phase formation, structure, and optical band gap. The followings are summarized: (1) polycrystalline metal, intermedium, or semiconductor SmS thin films were identified by XRD, TEM and the phase formation was achieved by controlling the ratio of dc to rf power; (2) the obtained lattice constant of intermedium phase was 5.85 Å from electron diffraction (ED) and 5.91 Å from lattice image. The former value is contraction by 2% compared with bulk semiconductor (5.97 Å), while the later one is contraction by 1% compared with semiconducting one, although this being probably semiconductor which is suggested by the dominated Sm 2+ valence state in Sm 3d of XPS; (3) XPS depth profile result confirm that metal Sm and samarium oxide exist near the film-substrate boundary in intermedium case, while stoichiometric SmS is dominant at the surface layer; (4) in semiconductor case, optical band gap is 2.67eV obtained by Tauc plot from SE results.
KW - Dual magnetron sputtering
KW - Optical band gap
KW - SmS thin films
KW - TEM
KW - XPS
KW - XRD
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U2 - 10.1016/S0169-4332(03)00113-2
DO - 10.1016/S0169-4332(03)00113-2
M3 - Article
AN - SCOPUS:17944389761
VL - 212-213
SP - 279
EP - 286
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - SPEC.
ER -