We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.
|ジャーナル||Journal of Materials Science: Materials in Electronics|
|出版ステータス||Published - 2007 10月|
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