Fabrication and optical characterization of vanadium oxide nano-particulates thin film

Sakae Tanemura; L. Miao; Y. Kajino; Y. Itano; M. Tanemura; S. Toh; K. Kaneko; Y. Mori

doi:10.1007/s10854-007-9182-z

Fabrication and optical characterization of vanadium oxide nano-particulates thin film

Sakae Tanemura, L. Miao, Y. Kajino, Y. Itano, M. Tanemura, S. Toh, K. Kaneko, Y. Mori

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO _0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.

本文言語	English
ページ（範囲）	43-46
ページ数	4
ジャーナル	Journal of Materials Science: Materials in Electronics
巻	18
号	SUPPL. 1
DOI	https://doi.org/10.1007/s10854-007-9182-z
出版ステータス	Published - 2007 10月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
原子分子物理学および光学
凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1007/s10854-007-9182-z

他のファイルとリンク

引用スタイル

@article{fd85e5d35f5247f48cbe9debe21cb40b,

title = "Fabrication and optical characterization of vanadium oxide nano-particulates thin film",

abstract = "We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.",

author = "Sakae Tanemura and L. Miao and Y. Kajino and Y. Itano and M. Tanemura and S. Toh and K. Kaneko and Y. Mori",

note = "Funding Information: Acknowledgement This work is supported in part by grants from the NITECH 21st Century COE program for {\textquoteright}{\textquoteright}World Ceramics Center for Environmental Harmony{\textquoteright}{\textquoteright}. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2007",

month = oct,

doi = "10.1007/s10854-007-9182-z",

language = "English",

volume = "18",

pages = "43--46",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Fabrication and optical characterization of vanadium oxide nano-particulates thin film

AU - Tanemura, Sakae

AU - Miao, L.

AU - Kajino, Y.

AU - Itano, Y.

AU - Tanemura, M.

AU - Toh, S.

AU - Kaneko, K.

AU - Mori, Y.

N1 - Funding Information: Acknowledgement This work is supported in part by grants from the NITECH 21st Century COE program for ’’World Ceramics Center for Environmental Harmony’’. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2007/10

Y1 - 2007/10

N2 - We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.

AB - We have succeeded to fabricate the thin films (350 nm in total thickness) consisting of semiconducting Vanadium-oxide (VO 0.9+x (0.30 ≤ x < 0.37)) nano-particles with 3.47 nm in averaged diameter by using the combined magnetron sputtering and gas aggregation methods. The optical band gap of the film is evaluated as 3.88 eV under the ad hoc assumption of direct allowed optical transition mode by spectroscopic ellipsometry. This value is expanded by 0.18 eV comparing with the estimated VO bulk value. The widening of band gap might be due to the lattice strain and/or the quantum confinement effect of the composed nano-particles.

UR - http://www.scopus.com/inward/record.url?scp=34547598014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547598014&partnerID=8YFLogxK

U2 - 10.1007/s10854-007-9182-z

DO - 10.1007/s10854-007-9182-z

M3 - Article

AN - SCOPUS:34547598014

VL - 18

SP - 43

EP - 46

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - SUPPL. 1

ER -

Fabrication and optical characterization of vanadium oxide nano-particulates thin film

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル