Bismuth silicate (Bi2SiO5) thin films expected as the intermediate buffer layer for metal-ferroelectric-insulator-semiconductor (MFIS) structures were fabricated on Si(100) wafers by rf magnetron sputtering. It was confirmed that the resultant films were single phases Bi2SiO5 with c-axis dominant orientated. The relative dielectric constant was estimated to be approximately 14. The leakage current density of the metal-insulator-semiconductor (MIS) diode is on the order of 10-10 A cm-2, under the applied electric field of less than 350 kV cm-1. In the capacitance-voltage (C-V) characteristics measurement results, it is worth nothing that hysteresis is hardly observed. The interface trap density at the midgap is estimated to be approximately 6×1012 cm-2 eV-1. The numerical evaluation results indicate that the MFIS capacitor can be reversed at a low applied voltage.
|出版ステータス||Published - 2000|
|イベント||12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States|
継続期間: 2000 7月 21 → 2000 8月 2
|Conference||12th IEEE International Symposium on Applications of Ferroelectrics|
|Period||00/7/21 → 00/8/2|
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