Fabrication of BIT films by alcohol-related ink and its properties

Masaki Yamaguchi, Tomohiro Oba, Yoichiro Masuda

研究成果: Article

抄録

Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.

元の言語English
ページ(範囲)106-112
ページ数7
ジャーナルFerroelectrics
380
発行部数1 PART 1
DOI
出版物ステータスPublished - 2009

Fingerprint

inks
Ink
alcohols
Alcohols
Diffraction
Fabrication
fabrication
Remanence
Full width at half maximum
Bismuth
diffraction
insulation
Perovskite
bismuth
Ferroelectric materials
Insulation
Thin films
Substrates
polarization
thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Fabrication of BIT films by alcohol-related ink and its properties. / Yamaguchi, Masaki; Oba, Tomohiro; Masuda, Yoichiro.

:: Ferroelectrics, 巻 380, 番号 1 PART 1, 2009, p. 106-112.

研究成果: Article

Yamaguchi, Masaki ; Oba, Tomohiro ; Masuda, Yoichiro. / Fabrication of BIT films by alcohol-related ink and its properties. :: Ferroelectrics. 2009 ; 巻 380, 番号 1 PART 1. pp. 106-112.
@article{034fbf33cc5e45789b1752736d096bbe,
title = "Fabrication of BIT films by alcohol-related ink and its properties",
abstract = "Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.",
keywords = "Alcoholic solution, Bismuth titanate, Ferroelectricity, Oxidation atmosphere, Thin film",
author = "Masaki Yamaguchi and Tomohiro Oba and Yoichiro Masuda",
year = "2009",
doi = "10.1080/00150190902873345",
language = "English",
volume = "380",
pages = "106--112",
journal = "Ferroelectrics",
issn = "0015-0193",
publisher = "Taylor and Francis Ltd.",
number = "1 PART 1",

}

TY - JOUR

T1 - Fabrication of BIT films by alcohol-related ink and its properties

AU - Yamaguchi, Masaki

AU - Oba, Tomohiro

AU - Masuda, Yoichiro

PY - 2009

Y1 - 2009

N2 - Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.

AB - Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.

KW - Alcoholic solution

KW - Bismuth titanate

KW - Ferroelectricity

KW - Oxidation atmosphere

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=77749344660&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77749344660&partnerID=8YFLogxK

U2 - 10.1080/00150190902873345

DO - 10.1080/00150190902873345

M3 - Article

AN - SCOPUS:77749344660

VL - 380

SP - 106

EP - 112

JO - Ferroelectrics

JF - Ferroelectrics

SN - 0015-0193

IS - 1 PART 1

ER -