Bismuth titanate (Bi4Ti3O12: BIT) thin film was prepared on Pt coated Si substrate by using by an alcoholic related material. The films show single perovskite phase and predominantly c-axis orientation, not independently on crystallized pressures. The diffraction peak intensity was remarkably increased, and the full width at half maximum (FWHM) value of the diffraction lines were decreased by increasing crystallized pressures. Moreover, insulation and ferroelectric properties were improved. The remanent polarization and the coercive field values were approximately 1.9 μ C/cm2 and 23kV/cm, respectively.
|号||1 PART 1|
|出版ステータス||Published - 2009|
|イベント||6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan, Province of China|
継続期間: 2008 8月 2 → 2008 8月 6
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