Fabrication of crystalline Ge thin films by co-deposition of Au and Ge at low substrate temperatures (>200 °c) without post annealing

Takatoshi Sugiyama, Naoya Mishiba, Masao Kamiko, Kentaro Kyuno

研究成果: Article

抄録

Crystalline Ge thin films with (111) orientation are obtained by co-depositing Au and Ge on a substrate heated to >170 °C, with Au segregating at the film surface, which is desirable for selective etching. Although in the conventional metal-induced crystallization method using Au as a catalyst, a bilayer of Au and amorphous Ge layers have to be annealed for Ge to crystallize, the film in this study is already crystalline in the as-deposited state. The effective crystallization process implies the existence of a supercooled liquid alloy layer at the growth front.

元の言語English
記事番号095501
ジャーナルApplied Physics Express
9
発行部数9
DOI
出版物ステータスPublished - 2016 9 1

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Crystallization
Annealing
crystallization
Crystalline materials
Fabrication
Thin films
fabrication
annealing
liquid alloys
Substrates
thin films
Crystal orientation
Etching
etching
catalysts
Temperature
Catalysts
temperature
Liquids
Metals

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Fabrication of crystalline Ge thin films by co-deposition of Au and Ge at low substrate temperatures (>200 °c) without post annealing. / Sugiyama, Takatoshi; Mishiba, Naoya; Kamiko, Masao; Kyuno, Kentaro.

:: Applied Physics Express, 巻 9, 番号 9, 095501, 01.09.2016.

研究成果: Article

@article{9373fefacd3a45a0a1faed027adde1a6,
title = "Fabrication of crystalline Ge thin films by co-deposition of Au and Ge at low substrate temperatures (>200 °c) without post annealing",
abstract = "Crystalline Ge thin films with (111) orientation are obtained by co-depositing Au and Ge on a substrate heated to >170 °C, with Au segregating at the film surface, which is desirable for selective etching. Although in the conventional metal-induced crystallization method using Au as a catalyst, a bilayer of Au and amorphous Ge layers have to be annealed for Ge to crystallize, the film in this study is already crystalline in the as-deposited state. The effective crystallization process implies the existence of a supercooled liquid alloy layer at the growth front.",
author = "Takatoshi Sugiyama and Naoya Mishiba and Masao Kamiko and Kentaro Kyuno",
year = "2016",
month = "9",
day = "1",
doi = "10.7567/APEX.9.095501",
language = "English",
volume = "9",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "9",

}

TY - JOUR

T1 - Fabrication of crystalline Ge thin films by co-deposition of Au and Ge at low substrate temperatures (>200 °c) without post annealing

AU - Sugiyama, Takatoshi

AU - Mishiba, Naoya

AU - Kamiko, Masao

AU - Kyuno, Kentaro

PY - 2016/9/1

Y1 - 2016/9/1

N2 - Crystalline Ge thin films with (111) orientation are obtained by co-depositing Au and Ge on a substrate heated to >170 °C, with Au segregating at the film surface, which is desirable for selective etching. Although in the conventional metal-induced crystallization method using Au as a catalyst, a bilayer of Au and amorphous Ge layers have to be annealed for Ge to crystallize, the film in this study is already crystalline in the as-deposited state. The effective crystallization process implies the existence of a supercooled liquid alloy layer at the growth front.

AB - Crystalline Ge thin films with (111) orientation are obtained by co-depositing Au and Ge on a substrate heated to >170 °C, with Au segregating at the film surface, which is desirable for selective etching. Although in the conventional metal-induced crystallization method using Au as a catalyst, a bilayer of Au and amorphous Ge layers have to be annealed for Ge to crystallize, the film in this study is already crystalline in the as-deposited state. The effective crystallization process implies the existence of a supercooled liquid alloy layer at the growth front.

UR - http://www.scopus.com/inward/record.url?scp=84987625019&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84987625019&partnerID=8YFLogxK

U2 - 10.7567/APEX.9.095501

DO - 10.7567/APEX.9.095501

M3 - Article

AN - SCOPUS:84987625019

VL - 9

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 9

M1 - 095501

ER -