Fabrication of densely distributed Si nanorods by Ar+-ion bombardment

Masaki Tanemura, M. Kobayashi, M. Kudo, H. Yamauchi, T. Okita, L. Miao, S. Tanemura

研究成果: Article査読

16 被引用数 (Scopus)


For the direct fabrication of densely distributed one dimensional nanostructures on Si substrates, Si (1 0 0) surfaces were bombarded by obliquely incident 3 keV Ar+ ions with a simultaneous supply of Mo seed atoms at various temperatures ranging from room temperature to 400 °C. The surface sputtered at room-temperature with Mo seeding was characterized by the nanocones pointing in the direction of the incident ion beam. In addition, they possessed a so-called "web" at their acute-angle side. This web decreased in size with an increase in the sputtering temperature. Thus, the projections fabricated at elevated temperatures were featured by the nanorod-like structure rather than conical structure. With increasing the sputtering temperature, projections decreased in base diameter (from ∼90 nm at 200 °C to ∼50 nm at 400 °C) while they increased in both length (from ∼160 nm at 200 °C to ∼240 nm at 400 °C) and numerical density (from ∼5 × 107 mm-2 at 200 °C to ∼1.2 × 108 mm-2 at 400 °C). The controlled fabrication of such densely distributed one dimensional nanoprojections on Si using ion beam technique, we believe, would open up a variety of applications such as nanoelectronics and optoelectronics devices.

ジャーナルSurface Science
出版ステータスPublished - 2006 9月 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学


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