TY - JOUR
T1 - Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode
AU - Ito, Tsuyoshi
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
AU - Jimbo, Takashi
AU - Umeno, Masayoshi
PY - 1997/12
Y1 - 1997/12
N2 - Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. An end mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1° by scanning ion microscopy. The root mean square surface roughness was 11 Å as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.
AB - Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. An end mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1° by scanning ion microscopy. The root mean square surface roughness was 11 Å as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.
KW - Atomic force microscopy
KW - End mirror
KW - Focused ion beam etching
KW - GaN-based blue-green laser diode
KW - Metalorganic chemical vapor deposition
KW - Reactive ion etching
KW - Root mean square surface roughness
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M3 - Article
AN - SCOPUS:0031346546
VL - 36
SP - 7710
EP - 7711
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12 SUPPL. B
ER -