Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode

Tsuyoshi Ito, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Heteroepitaxial GaN film was deposited on sapphire by metalorganic chemical vapor deposition. An end mirror for the GaN-based blue-green laser diode was prepared using focused ion beam (FIB) etching. The tilt angle normal to the GaN layer was shown to be less than 1° by scanning ion microscopy. The root mean square surface roughness was 11 Å as observed by atomic force microscopy. The data indicates that FIB is a powerful technique for the fabrication of GaN-based blue-green laser diodes.

本文言語English
ページ(範囲)7710-7711
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
12 SUPPL. B
出版ステータスPublished - 1997 12月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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