Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Nobuyuki Futai; Kiyoshi Matsumoto; Isao Shimoyama

Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Nobuyuki Futai, Kiyoshi Matsumoto, Isao Shimoyama

研究成果: Paper › 査読

抄録

An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

本文言語	English
ページ	168-171
ページ数	4
出版ステータス	Published - 2002 1 1
外部発表	はい
イベント	15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States 継続期間: 2002 1 20 → 2002 1 24

Conference

Conference	15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002
Country	United States
City	Las Vegas, NV
Period	02/1/20 → 02/1/24

ASJC Scopus subject areas

Control and Systems Engineering
Mechanical Engineering
Electrical and Electronic Engineering

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引用スタイル

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abstract = "An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.",

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AU - Futai, Nobuyuki

AU - Matsumoto, Kiyoshi

AU - Shimoyama, Isao

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Y1 - 2002/1/1

N2 - An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

AB - An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

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T2 - 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002

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