Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Nobuyuki Futai; Kiyoshi Matsumoto; Isao Shimoyama

Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Nobuyuki Futai, Kiyoshi Matsumoto, Isao Shimoyama

研究成果: Paper › 査読

抄録

An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

本文言語	English
ページ	168-171
ページ数	4
出版ステータス	Published - 2002 1月 1
外部発表	はい
イベント	15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States 継続期間: 2002 1月 20 → 2002 1月 24

Conference

Conference	15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002
国/地域	United States
City	Las Vegas, NV
Period	02/1/20 → 02/1/24

ASJC Scopus subject areas

制御およびシステム工学
機械工学
電子工学および電気工学

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@conference{8f508b425f4b42ab82f5b1e19e75ba90,

title = "Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist",

abstract = "An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.",

author = "Nobuyuki Futai and Kiyoshi Matsumoto and Isao Shimoyama",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "168--171",

note = "15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 ; Conference date: 20-01-2002 Through 24-01-2002",

}

TY - CONF

T1 - Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

AU - Futai, Nobuyuki

AU - Matsumoto, Kiyoshi

AU - Shimoyama, Isao

PY - 2002/1/1

Y1 - 2002/1/1

N2 - An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

AB - An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

UR - http://www.scopus.com/inward/record.url?scp=0036197822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036197822&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036197822

SP - 168

EP - 171

T2 - 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002

Y2 - 20 January 2002 through 24 January 2002

ER -

Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

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Conference

ASJC Scopus subject areas

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