Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist

Nobuyuki Futai, Kiyoshi Matsumoto, Isao Shimoyama

研究成果: Paper

7 引用 (Scopus)

抜粋

An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.

元の言語English
ページ168-171
ページ数4
出版物ステータスPublished - 2002 1 1
外部発表Yes
イベント15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States
継続期間: 2002 1 202002 1 24

Conference

Conference15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002
United States
Las Vegas, NV
期間02/1/2002/1/24

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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  • これを引用

    Futai, N., Matsumoto, K., & Shimoyama, I. (2002). Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist. 168-171. 論文発表場所 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002, Las Vegas, NV, United States.