抜粋
An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.
| 元の言語 | English |
|---|---|
| ページ | 168-171 |
| ページ数 | 4 |
| 出版物ステータス | Published - 2002 1 1 |
| 外部発表 | Yes |
| イベント | 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States 継続期間: 2002 1 20 → 2002 1 24 |
Conference
| Conference | 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 |
|---|---|
| 国 | United States |
| 市 | Las Vegas, NV |
| 期間 | 02/1/20 → 02/1/24 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Mechanical Engineering
- Electrical and Electronic Engineering
フィンガープリント Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Futai, N., Matsumoto, K., & Shimoyama, I. (2002). Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist. 168-171. 論文発表場所 15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002, Las Vegas, NV, United States.