An optimized sol-gel process and an SU-8 photoresist were used to produce thick and high-aspect-ratio lead zirconate titanate (PZT) structures on platinized silicon substrates. The fabrication process involved single coating, lapping of the gel, and rapid firing. The PZT structures made with this new process were crack-free and had good crystallinity. Their XRD patterns and ferroelectric properties showed that the structures were high quality PZT. Values of relative permittivity and dielectric loss of the PZT were over 300 and 0.03, respectively. The structures had thickness of 20 μm or higher, and had aspect ratio of over one.
|出版ステータス||Published - 2002 1月 1|
|イベント||15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002 - Las Vegas, NV, United States|
継続期間: 2002 1月 20 → 2002 1月 24
|Conference||15th IEEE International Conference on Micro Electro Mechanical Systems MEMS 2002|
|City||Las Vegas, NV|
|Period||02/1/20 → 02/1/24|
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