抄録
As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.
本文言語 | English |
---|---|
ページ(範囲) | 1388-1392 |
ページ数 | 5 |
ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
巻 | 43 |
号 | 4 A |
DOI | |
出版ステータス | Published - 2004 4月 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)