Fabrication of semiconductor laser for integration with optical isolator

Kazumasa Sakurai; Hideki Yokoi; Tetsuya Mizumoto; Daisuke Miyashita; Yoshiaki Nakano

doi:10.1143/JJAP.43.1388

Fabrication of semiconductor laser for integration with optical isolator

Kazumasa Sakurai, Hideki Yokoi, Tetsuya Mizumoto, Daisuke Miyashita, Yoshiaki Nakano

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

本文言語	English
ページ（範囲）	1388-1392
ページ数	5
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	43
号	4 A
DOI	https://doi.org/10.1143/JJAP.43.1388
出版ステータス	Published - 2004 4
外部発表	はい

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

文献へのアクセス

10.1143/JJAP.43.1388

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引用スタイル

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abstract = "As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.",

keywords = "Focused ion beam, Laser diode, Monolithic integration, Optical isolator, Selective-area growth, Wafer direct-bonding",

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AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Miyashita, Daisuke

AU - Nakano, Yoshiaki

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KW - Laser diode

KW - Monolithic integration

KW - Optical isolator

KW - Selective-area growth

KW - Wafer direct-bonding

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