Fabrication of semiconductor laser for integration with optical isolator

Kazumasa Sakurai; Hideki Yokoi; Tetsuya Mizumoto; Daisuke Miyashita; Yoshiaki Nakano

doi:10.1143/JJAP.43.1388

Fabrication of semiconductor laser for integration with optical isolator

Kazumasa Sakurai, Hideki Yokoi, Tetsuya Mizumoto, Daisuke Miyashita, Yoshiaki Nakano

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

本文言語	English
ページ（範囲）	1388-1392
ページ数	5
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	43
号	4 A
DOI	https://doi.org/10.1143/JJAP.43.1388
出版ステータス	Published - 2004 4
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.43.1388

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title = "Fabrication of semiconductor laser for integration with optical isolator",

abstract = "As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.",

keywords = "Focused ion beam, Laser diode, Monolithic integration, Optical isolator, Selective-area growth, Wafer direct-bonding",

author = "Kazumasa Sakurai and Hideki Yokoi and Tetsuya Mizumoto and Daisuke Miyashita and Yoshiaki Nakano",

year = "2004",

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doi = "10.1143/JJAP.43.1388",

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T1 - Fabrication of semiconductor laser for integration with optical isolator

AU - Sakurai, Kazumasa

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Miyashita, Daisuke

AU - Nakano, Yoshiaki

PY - 2004/4

Y1 - 2004/4

N2 - As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

AB - As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

KW - Focused ion beam

KW - Laser diode

KW - Monolithic integration

KW - Optical isolator

KW - Selective-area growth

KW - Wafer direct-bonding

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DO - 10.1143/JJAP.43.1388

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EP - 1392

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 A

ER -

Fabrication of semiconductor laser for integration with optical isolator

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