Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array

Naokatsu Ikegami, Takashi Yoshida, Akira Kojima, Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Kentaro Totsu, Nobuyoshi Koshida, Masayoshi Esashi

研究成果: Conference contribution

抄録

Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n++-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.

本文言語English
ホスト出版物のタイトル2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ578-582
ページ数5
ISBN(電子版)9781509019472
DOI
出版ステータスPublished - 2016 11月 28
外部発表はい
イベント11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 - Sendai, Japan
継続期間: 2016 4月 172016 4月 20

出版物シリーズ

名前2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016

Conference

Conference11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
国/地域Japan
CitySendai
Period16/4/1716/4/20

ASJC Scopus subject areas

  • 産業および生産工学
  • 機械工学
  • 材料力学
  • 電子材料、光学材料、および磁性材料

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