Fe-Te-Se epitaxial thin films with enhanced superconducting properties

Paolo Mele; Kaname Matsumoto; Kouhei Fujita; Yutaka Yoshida; Takanobu Kiss; Ataru Ichinose; Masashi Mukaida

doi:10.1088/0953-2048/25/8/084021

Fe-Te-Se epitaxial thin films with enhanced superconducting properties

Paolo Mele, Kaname Matsumoto, Kouhei Fujita, Yutaka Yoshida, Takanobu Kiss, Ataru Ichinose, Masashi Mukaida

研究成果: Article › 査読

25 被引用数 (Scopus)

抄録

Epitaxial Fe-Te-Se thin films were deposited by pulsed laser deposition at 250-600°C on SrTiO ₃ (100), MgO (100), LaAlO ₃ (100) and CaF ₂ (100) single crystal substrates. The best superconducting film was grown on CaF ₂: K and K with T _dep=300°C and 3Hz. Critical current density J _c (T=4.2K) was 0.41×10 ⁶Acm ² at 0T and 0.23×10 ⁶Acm ² at 9T. The angular dependence of J _c shows a broad c-axis correlated peak when B3T.

本文言語	English
論文番号	084021
ジャーナル	Superconductor Science and Technology
巻	25
号	8
DOI	https://doi.org/10.1088/0953-2048/25/8/084021
出版ステータス	Published - 2012 8
外部発表	はい

ASJC Scopus subject areas

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

文献へのアクセス

10.1088/0953-2048/25/8/084021

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引用スタイル

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abstract = "Epitaxial Fe-Te-Se thin films were deposited by pulsed laser deposition at 250-600°C on SrTiO 3 (100), MgO (100), LaAlO 3 (100) and CaF 2 (100) single crystal substrates. The best superconducting film was grown on CaF 2: K and K with T dep=300°C and 3Hz. Critical current density J c (T=4.2K) was 0.41×10 6Acm 2 at 0T and 0.23×10 6Acm 2 at 9T. The angular dependence of J c shows a broad c-axis correlated peak when B3T.",

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AU - Mele, Paolo

AU - Matsumoto, Kaname

AU - Fujita, Kouhei

AU - Yoshida, Yutaka

AU - Kiss, Takanobu

AU - Ichinose, Ataru

AU - Mukaida, Masashi

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AB - Epitaxial Fe-Te-Se thin films were deposited by pulsed laser deposition at 250-600°C on SrTiO 3 (100), MgO (100), LaAlO 3 (100) and CaF 2 (100) single crystal substrates. The best superconducting film was grown on CaF 2: K and K with T dep=300°C and 3Hz. Critical current density J c (T=4.2K) was 0.41×10 6Acm 2 at 0T and 0.23×10 6Acm 2 at 9T. The angular dependence of J c shows a broad c-axis correlated peak when B3T.

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