Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC

Manato Deki, Minoru Yamamoto, Takuto Ito, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Femtosecond laser modification was used to enhance the local electrical conductivities in silicon carbide (SiC). Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts on SiC. The currents of modified lines increased more than six orders of magnitude when compared with those of the non-irradiated SiC. The current sharply increased in the fluence range from 3.3 to 6.7J/cm 2. From the I-V characteristics and scanning elctroron microscope (SEM) observations, we conclude that the modification related to the formation of the classical laser-induced periodic structures causes the drastic increase of electrical conductivities.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
ページ119-120
ページ数2
DOI
出版ステータスPublished - 2011 12月 1
外部発表はい
イベント30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
継続期間: 2010 7月 252010 7月 30

出版物シリーズ

名前AIP Conference Proceedings
1399
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
国/地域Korea, Republic of
CitySeoul
Period10/7/2510/7/30

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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