TY - JOUR
T1 - Fermi level shift in la1-xSrxMO3 (M=Mn, Fe, Co, and Ni) probed by Schottky-like heteroepitaxial junctions with SrTi 0.99Nb0.01O3
AU - Sawa, A.
AU - Yamamoto, A.
AU - Yamada, H.
AU - Fujii, T.
AU - Kawasaki, M.
AU - Matsuno, J.
AU - Tokura, Y.
N1 - Funding Information:
This work was supported in part by the Industrial Technology Research Grant Program in 2005 from the New Energy and Industrial Technology Development Organization (NEDO) of Japan.
PY - 2007
Y1 - 2007
N2 - The authors have studied electrical properties of perovskite heteroepitaxial junctions consisting of transition metal oxides La 1-xSrxMO3 (LSMO: M=Mn, Fe, Co, and Ni) and an n-type semiconductor SrTi0.99Nb0.01O3 (Nb:STO). The junctions showed rectifying current-voltage characteristics that could be analyzed by taking into account a Schottky-like barrier formed in the Nb:STO at the interfaces. As the doping level x is increased, the Schottky barrier height and built-in potential increase as ∼x (eV), indicating the downward shift of the Fermi level position in the LSMO. The Fermi level position in the LSMO with the same doping level x tends to be deepened with increasing the atomic number of M, in the order of Mn, Fe, Co, and Ni.
AB - The authors have studied electrical properties of perovskite heteroepitaxial junctions consisting of transition metal oxides La 1-xSrxMO3 (LSMO: M=Mn, Fe, Co, and Ni) and an n-type semiconductor SrTi0.99Nb0.01O3 (Nb:STO). The junctions showed rectifying current-voltage characteristics that could be analyzed by taking into account a Schottky-like barrier formed in the Nb:STO at the interfaces. As the doping level x is increased, the Schottky barrier height and built-in potential increase as ∼x (eV), indicating the downward shift of the Fermi level position in the LSMO. The Fermi level position in the LSMO with the same doping level x tends to be deepened with increasing the atomic number of M, in the order of Mn, Fe, Co, and Ni.
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U2 - 10.1063/1.2749431
DO - 10.1063/1.2749431
M3 - Article
AN - SCOPUS:34547342843
SN - 0003-6951
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 25
M1 - 252102
ER -