Fermi level shift in la1-xSrxMO3 (M=Mn, Fe, Co, and Ni) probed by Schottky-like heteroepitaxial junctions with SrTi 0.99Nb0.01O3

A. Sawa, A. Yamamoto, H. Yamada, T. Fujii, M. Kawasaki, J. Matsuno, Y. Tokura

研究成果: Article査読

45 被引用数 (Scopus)

抄録

The authors have studied electrical properties of perovskite heteroepitaxial junctions consisting of transition metal oxides La 1-xSrxMO3 (LSMO: M=Mn, Fe, Co, and Ni) and an n-type semiconductor SrTi0.99Nb0.01O3 (Nb:STO). The junctions showed rectifying current-voltage characteristics that could be analyzed by taking into account a Schottky-like barrier formed in the Nb:STO at the interfaces. As the doping level x is increased, the Schottky barrier height and built-in potential increase as ∼x (eV), indicating the downward shift of the Fermi level position in the LSMO. The Fermi level position in the LSMO with the same doping level x tends to be deepened with increasing the atomic number of M, in the order of Mn, Fe, Co, and Ni.

本文言語English
論文番号252102
ジャーナルApplied Physics Letters
90
25
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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