Field-dependent mobility of highly oriented pentacene thin-film transistors

Taiki Komoda, Yasuhiro Endo, Kentaro Kyuno, Akira Toriumi

研究成果: Article査読

34 被引用数 (Scopus)

抄録

Pentacene thin films were grown by vacuum evaporation method. The structural properties of the films were characterized by X-ray diffraction and atomic force microscopy. Carrier transport characteristics of pentacene thin film transistors were investigated in terms of the field-dependent mobility. It was found in X-ray diffraction analysis that moderate thermal treatment significantly improved the film quality, but little modification was observed under the atomic force microscope and the electrical characteristics measurement. Thus, it can be concluded that it is of great importance to control the surface conditions and the early stage of film growth.

本文言語English
ページ(範囲)2767-2769
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
4 B
DOI
出版ステータスPublished - 2002 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Field-dependent mobility of highly oriented pentacene thin-film transistors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル