TY - JOUR
T1 - Fluorinated SiO2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections
AU - Homma, Tetsuya
PY - 1995/1/1
Y1 - 1995/1/1
N2 - The use of fluorinated SiO2 films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO2 film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO2 film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).
AB - The use of fluorinated SiO2 films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO2 film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO2 film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).
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U2 - 10.1557/proc-381-239
DO - 10.1557/proc-381-239
M3 - Conference article
AN - SCOPUS:0029181056
VL - 381
SP - 239
EP - 248
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
T2 - Proceedings of the Spring Meeting on MRS
Y2 - 17 April 1995 through 20 April 1995
ER -