Fluorinated SiO2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections

研究成果: Conference article査読

7 被引用数 (Scopus)

抄録

The use of fluorinated SiO2 films as interlayer dielectrics in ULSI multilevel interconnections was evaluated. The films need to meet the following requirements: low dielectric constant; high planarization capability; high narrow gap filling capability; and low deposition temperature. The technologies investigated were: a fluorinated SiO2 film by room temperature chemical vapor deposition (RTCVD-SiOF) using fluorotialkoxysilane (FTAS) and pure water as gas sources; a room temperature liquid phase deposition (LPD) SiO2 film; and a fluorinated spin-on-glass film by fluorotrialkoxysilane vapor treatment (FAST-SOG).

本文言語English
ページ(範囲)239-248
ページ数10
ジャーナルMaterials Research Society Symposium - Proceedings
381
DOI
出版ステータスPublished - 1995 1月 1
外部発表はい
イベントProceedings of the Spring Meeting on MRS - San Francisco, CA, USA
継続期間: 1995 4月 171995 4月 20

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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