Flux-based approach to HBT device modeling

Shin ichi Tanaka, Mark S. Lundstrom

研究成果

2 被引用数 (Scopus)

抄録

We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.

本文言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting
編集者 Anon
出版社Publ by IEEE
ページ505-508
ページ数4
ISBN(印刷版)0780314506
出版ステータスPublished - 1993 12 1
外部発表はい
イベントProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
継続期間: 1993 12 51993 12 8

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting
ISSN(印刷版)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period93/12/593/12/8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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