Flux-based approach to HBT device modeling

Shin ichi Tanaka, Mark S. Lundstrom

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

We describe a new approach to modeling carrier transport in heterojunction bipolar transistors (HBTs). Based on McKelvey's flux method, and formulated by 2×2 scattering matrices, the technique provides ease of analysis as well as insight into the complicated device physics in modern HBTs. Despite its compactness, the model is in excellent agreement with both experiment and a Boltzmann equation based theory. Some applications relevant to short base transport, and extensions to the basic model are also discussed.

元の言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting
編集者 Anon
出版者Publ by IEEE
ページ505-508
ページ数4
ISBN(印刷物)0780314506
出版物ステータスPublished - 1993 12 1
イベントProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
継続期間: 1993 12 51993 12 8

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting
ISSN(印刷物)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
Washington, DC, USA
期間93/12/593/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • これを引用

    Tanaka, S. I., & Lundstrom, M. S. (1993). Flux-based approach to HBT device modeling. : Anon (版), Technical Digest - International Electron Devices Meeting (pp. 505-508). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.