Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates

M. Hao, H. Ishikawa, T. Egawa

研究成果: Article査読

12 被引用数 (Scopus)

抄録

The growth of high-quality GaN films on sapphire substrates with high-density nanocraters was investigated. The nanocraters were formed on the surface of the substrates in situ a MOCVD reactor by GaN decomposition induced etching. The scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD), Hall measurement and photoluminescence (PL) analysis were used for the characterization of the films. It was observed that the decomposition of GaN induced the decomposition of sapphire, which resulted in the formation of high density nanocraters on its surface.

本文言語English
ページ(範囲)4041-4043
ページ数3
ジャーナルApplied Physics Letters
84
20
DOI
出版ステータスPublished - 2004 5月 17
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル