The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.
|ジャーナル||Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)|
|出版ステータス||Published - 1997 1月 1|
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