Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO2

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Yoshimichi Ohki

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers.

本文言語English
ページ（範囲）9-19
ページ数11
ジャーナルElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
巻121
号3
DOI
出版ステータスPublished - 1997 1月 1
外部発表はい

ASJC Scopus subject areas

  • エネルギー工学および電力技術
  • 電子工学および電気工学

文献へのアクセス

他のファイルとリンク

フィンガープリント

「Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO2」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。
完全なフィンガープリントを表示

引用スタイル