Formation of nanovoids in femtosecond laser-irradiated single crystals of silicon carbide

Tatsuya Okada, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Ryota Kashino, Takuto Ito

研究成果: Conference contribution

5 引用 (Scopus)

抜粋

Scanning transmission electron microscopy was carried out to study the three-dimensional microstructures of periodic strained layers induced by the irradiation of femtosecond laser pulses inside a silicon carbide single crystal. The cross section of laser-irradiated line consisted of a shell-shaped modified region surrounding a core region with no modification. The laser-modified region was composed of strained layers with a typical spacing of 200 nm. Nanovoids from 10 nm to 20 nm in diameter were observed. Three-dimensional tomographic images clearly show the plate-like shape of strained layers extending parallel to the electric field of the laser light and the random distribution of nanovoids in the strained layers. The three-dimensional observation provides insight into the formation mechanisms of periodic microstructures.

元の言語English
ホスト出版物のタイトルDefects-Recognition, Imaging and Physics in Semiconductors XIV
ページ19-22
ページ数4
DOI
出版物ステータスPublished - 2012 12 1
外部発表Yes
イベント14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
継続期間: 2011 9 252011 9 29

出版物シリーズ

名前Materials Science Forum
725
ISSN(印刷物)0255-5476

Conference

Conference14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Japan
Miyazaki
期間11/9/2511/9/29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Okada, T., Tomita, T., Matsuo, S., Hashimoto, S., Kashino, R., & Ito, T. (2012). Formation of nanovoids in femtosecond laser-irradiated single crystals of silicon carbide. : Defects-Recognition, Imaging and Physics in Semiconductors XIV (pp. 19-22). (Materials Science Forum; 巻数 725). https://doi.org/10.4028/www.scientific.net/MSF.725.19