Fourier-transform infrared spectroscopy of femtosecond laser-modified SiC

T. Tomita, M. Iwami, Shigeki Matsuo, S. Hashimoto, S. Saito, K. Sakai

研究成果: Article

抄録

Characterization of femtosecond laser-modified areas on silicon carbide (SiC) was carried out through Fourier transform infrared reflectance spectra. The sample scanning was carried out during femtosecond laser irradiation to make larger modified area in order to evaluate the changes of the spectra by Fourier transform infrared spectrometer. The spectra were well fitted by the analytical function which is calculated through the dielectric functions of SiC including the effect from free carriers. The obtained parameters indicated that the enhancement of damping constant of longitudi-nal optical phonons after laser irradiation. This enhancement is due the degradation of crystallinity of SiC. The strong correlation between the direction of modified lines and the polarization of infra-red probe light was found. This correlation opens the possible application of femtosecond laser-modification in SiC for control the optical properties in infrared region.

元の言語English
ページ(範囲)182-185
ページ数4
ジャーナルJournal of Laser Micro Nanoengineering
4
発行部数3
DOI
出版物ステータスPublished - 2009
外部発表Yes

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Ultrashort pulses
Silicon carbide
silicon carbides
Fourier transform infrared spectroscopy
infrared spectroscopy
Laser beam effects
Infrared radiation
lasers
Fourier transforms
Infrared spectrometers
irradiation
augmentation
infrared spectrometers
Phonons
light beams
crystallinity
phonons
Optical properties
Damping
damping

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Instrumentation
  • Electrical and Electronic Engineering

これを引用

Fourier-transform infrared spectroscopy of femtosecond laser-modified SiC. / Tomita, T.; Iwami, M.; Matsuo, Shigeki; Hashimoto, S.; Saito, S.; Sakai, K.

:: Journal of Laser Micro Nanoengineering, 巻 4, 番号 3, 2009, p. 182-185.

研究成果: Article

Tomita, T. ; Iwami, M. ; Matsuo, Shigeki ; Hashimoto, S. ; Saito, S. ; Sakai, K. / Fourier-transform infrared spectroscopy of femtosecond laser-modified SiC. :: Journal of Laser Micro Nanoengineering. 2009 ; 巻 4, 番号 3. pp. 182-185.
@article{2bea6bbaf5e94f929494b683c1089db0,
title = "Fourier-transform infrared spectroscopy of femtosecond laser-modified SiC",
abstract = "Characterization of femtosecond laser-modified areas on silicon carbide (SiC) was carried out through Fourier transform infrared reflectance spectra. The sample scanning was carried out during femtosecond laser irradiation to make larger modified area in order to evaluate the changes of the spectra by Fourier transform infrared spectrometer. The spectra were well fitted by the analytical function which is calculated through the dielectric functions of SiC including the effect from free carriers. The obtained parameters indicated that the enhancement of damping constant of longitudi-nal optical phonons after laser irradiation. This enhancement is due the degradation of crystallinity of SiC. The strong correlation between the direction of modified lines and the polarization of infra-red probe light was found. This correlation opens the possible application of femtosecond laser-modification in SiC for control the optical properties in infrared region.",
keywords = "Femtosecond laser, Fourier transform infrared (FTIR) spectros-copy, Silicon carbide (SiC)",
author = "T. Tomita and M. Iwami and Shigeki Matsuo and S. Hashimoto and S. Saito and K. Sakai",
year = "2009",
doi = "10.2961/jlmn.2009.03.0007",
language = "English",
volume = "4",
pages = "182--185",
journal = "Journal of Laser Micro Nanoengineering",
issn = "1880-0688",
publisher = "Japan Laser Processing",
number = "3",

}

TY - JOUR

T1 - Fourier-transform infrared spectroscopy of femtosecond laser-modified SiC

AU - Tomita, T.

AU - Iwami, M.

AU - Matsuo, Shigeki

AU - Hashimoto, S.

AU - Saito, S.

AU - Sakai, K.

PY - 2009

Y1 - 2009

N2 - Characterization of femtosecond laser-modified areas on silicon carbide (SiC) was carried out through Fourier transform infrared reflectance spectra. The sample scanning was carried out during femtosecond laser irradiation to make larger modified area in order to evaluate the changes of the spectra by Fourier transform infrared spectrometer. The spectra were well fitted by the analytical function which is calculated through the dielectric functions of SiC including the effect from free carriers. The obtained parameters indicated that the enhancement of damping constant of longitudi-nal optical phonons after laser irradiation. This enhancement is due the degradation of crystallinity of SiC. The strong correlation between the direction of modified lines and the polarization of infra-red probe light was found. This correlation opens the possible application of femtosecond laser-modification in SiC for control the optical properties in infrared region.

AB - Characterization of femtosecond laser-modified areas on silicon carbide (SiC) was carried out through Fourier transform infrared reflectance spectra. The sample scanning was carried out during femtosecond laser irradiation to make larger modified area in order to evaluate the changes of the spectra by Fourier transform infrared spectrometer. The spectra were well fitted by the analytical function which is calculated through the dielectric functions of SiC including the effect from free carriers. The obtained parameters indicated that the enhancement of damping constant of longitudi-nal optical phonons after laser irradiation. This enhancement is due the degradation of crystallinity of SiC. The strong correlation between the direction of modified lines and the polarization of infra-red probe light was found. This correlation opens the possible application of femtosecond laser-modification in SiC for control the optical properties in infrared region.

KW - Femtosecond laser

KW - Fourier transform infrared (FTIR) spectros-copy

KW - Silicon carbide (SiC)

UR - http://www.scopus.com/inward/record.url?scp=84951080415&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84951080415&partnerID=8YFLogxK

U2 - 10.2961/jlmn.2009.03.0007

DO - 10.2961/jlmn.2009.03.0007

M3 - Article

AN - SCOPUS:84951080415

VL - 4

SP - 182

EP - 185

JO - Journal of Laser Micro Nanoengineering

JF - Journal of Laser Micro Nanoengineering

SN - 1880-0688

IS - 3

ER -