Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device

Hiroshige Sugimoto, Yoshiharu Kariya, Ryuichiro Hanada, Akihisa Fukumoto, Yusaku Ito, Shinnosuke Soda

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A mechanism of the vertical direction fracture in die attach was investigated. A crack occurred in the metallic compound/\beta -Sn interface by the stress in \beta -Sn dendrite boundary. By the growth of the crack, a cross-shaped damage occurred. The growth of the cross-shaped damage seemed to have caused a vertical direction fracture.

本文言語English
ホスト出版物のタイトルProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ数1
ISBN(電子版)9784904743072
DOI
出版ステータスPublished - 2019 5
イベント6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
継続期間: 2019 5 212019 5 25

出版物シリーズ

名前Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
国/地域Japan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

ASJC Scopus subject areas

  • プロセス化学およびプロセス工学
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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