Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device

Hiroshige Sugimoto, Yoshiharu Kariya, Ryuichiro Hanada, Akihisa Fukumoto, Yusaku Ito, Shinnosuke Soda

研究成果: Conference contribution

抜粋

A mechanism of the vertical direction fracture in die attach was investigated. A crack occurred in the metallic compound/\beta -Sn interface by the stress in \beta -Sn dendrite boundary. By the growth of the crack, a cross-shaped damage occurred. The growth of the cross-shaped damage seemed to have caused a vertical direction fracture.

元の言語English
ホスト出版物のタイトルProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ数1
ISBN(電子版)9784904743072
DOI
出版物ステータスPublished - 2019 5
イベント6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
継続期間: 2019 5 212019 5 25

出版物シリーズ

名前Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Japan
Kanazawa, Ishikawa
期間19/5/2119/5/25

    フィンガープリント

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

Sugimoto, H., Kariya, Y., Hanada, R., Fukumoto, A., Ito, Y., & Soda, S. (2019). Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device. : Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 [8735334] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735334