Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems

K. Kita, M. Sasagawa, K. Tomida, M. Tohyama, K. Kyuno, A. Toriumi

研究成果: Conference contribution

4 引用 (Scopus)

抜粋

In this paper, we describe a comprehensive comparision between Ge/HfO2 and Si/HfO2 system through physical and electrical properties.

元の言語English
ホスト出版物のタイトルExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
出版者Institute of Electrical and Electronics Engineers Inc.
ページ186-191
ページ数6
ISBN(印刷物)4891140372, 9784891140373
DOI
出版物ステータスPublished - 2003
外部発表Yes
イベントInternational Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
継続期間: 2003 11 62003 11 7

Other

OtherInternational Workshop on Gate Insulator, IWGI 2003
Japan
Tokyo
期間03/11/603/11/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント Further EOT scaling of Ge/HfO<sub>2</sub> over Si/HfO<sub>2</sub> MOS systems' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Kita, K., Sasagawa, M., Tomida, K., Tohyama, M., Kyuno, K., & Toriumi, A. (2003). Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems. : Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 186-191). [1252534] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159209