Future Trend for Interlayer Dielectric Films and Their Formation Technomogies in VLSI Multilevel Interconnections

T. Homma

研究成果: Article

5 引用 (Scopus)
元の言語English
ページ（範囲）357-366
ジャーナルInternational Conference on Electronic Materials, Proceedings Volume
出版物ステータスPublished - 1995 1 1

これを引用

Future Trend for Interlayer Dielectric Films and Their Formation Technomogies in VLSI Multilevel Interconnections. / Homma, T.

：: International Conference on Electronic Materials, Proceedings Volume, 01.01.1995, p. 357-366.

研究成果: Article

Homma, T 1995, 'Future Trend for Interlayer Dielectric Films and Their Formation Technomogies in VLSI Multilevel Interconnections', International Conference on Electronic Materials, Proceedings Volume, pp. 357-366.
Homma T. Future Trend for Interlayer Dielectric Films and Their Formation Technomogies in VLSI Multilevel Interconnections. International Conference on Electronic Materials, Proceedings Volume. 1995 1 1;357-366.
Homma, T. / Future Trend for Interlayer Dielectric Films and Their Formation Technomogies in VLSI Multilevel Interconnections. ：: International Conference on Electronic Materials, Proceedings Volume. 1995 ; pp. 357-366.
@article{7bdb00a71967442a9ad80d4c3df7c236,
title = "Future Trend for Interlayer Dielectric Films and Their Formation Technomogies in VLSI Multilevel Interconnections",
author = "T. Homma",
year = "1995",
month = "1",
day = "1",
language = "English",
pages = "357--366",
journal = "International Conference on Electronic Materials, Proceedings Volume",

}

TY - JOUR

T1 - Future Trend for Interlayer Dielectric Films and Their Formation Technomogies in VLSI Multilevel Interconnections

AU - Homma, T.

PY - 1995/1/1

Y1 - 1995/1/1

M3 - Article

SP - 357

EP - 366

JO - International Conference on Electronic Materials, Proceedings Volume

JF - International Conference on Electronic Materials, Proceedings Volume

ER -