Future trends for interlayer dielectric films and their formation technologies in ULSI multilevel interconnections

研究成果: Article

7 引用 (Scopus)

抄録

In the future quarter-micron multilevel interconnections, the interlayer dielectric film properties and their formation techniques will have to meet three requirements: (1) a high surface planarization capability, (2) a low dielectric constant, and (3) a low deposition temperature. In order to achieve these requirements, many technologies have been investigated. Selective deposition of SiO2 films is the best way to achieve full planarization of the interlayer dielectric film surface. Two selective SiO2 film deposition techniques have been developed. One is a liquid phase deposition (LPD) technique at room temperature, using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. The other is a semiselective SiO2 film deposition technique at 390 °C, using tetraethylorthosilicate (TEOS, Si(OC2H5)3) and ozone (O3) as gas sources, with the assistance of tetrafluorocarbon (CF4) plasma pretreatment for TiW or TiN surfaces of wiring top layers. The dielectric constant of SiO2 films can be reduced from 3.9-4.3 to 3.7 at 1 MHz, by the LPD technique or a room temperature chemical vapor deposition (RTCVD) technique using the fluorotrialkoxysilane (FTAS) group and pure water as gas sources. Room temperature film formation can be achieved by the following three techniques: (i) LPD, (ii) RTCVD, and (iii) fluoroalkoxysilane vapor treatment (FAST) for spin-on-glass (SOG).

元の言語English
ページ(範囲)234-239
ページ数6
ジャーナルMaterials Chemistry & Physics
41
発行部数4
DOI
出版物ステータスPublished - 1995
外部発表Yes

Fingerprint

Dielectric films
interlayers
trends
liquid phases
room temperature
Chemical vapor deposition
Liquids
Permittivity
Temperature
Gases
vapor deposition
permittivity
requirements
wiring
Ozone
Electric wiring
gases
pretreatment
ozone
Vapors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

これを引用

@article{137882cc5f85422cb0fb1bd23056253b,
title = "Future trends for interlayer dielectric films and their formation technologies in ULSI multilevel interconnections",
abstract = "In the future quarter-micron multilevel interconnections, the interlayer dielectric film properties and their formation techniques will have to meet three requirements: (1) a high surface planarization capability, (2) a low dielectric constant, and (3) a low deposition temperature. In order to achieve these requirements, many technologies have been investigated. Selective deposition of SiO2 films is the best way to achieve full planarization of the interlayer dielectric film surface. Two selective SiO2 film deposition techniques have been developed. One is a liquid phase deposition (LPD) technique at room temperature, using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. The other is a semiselective SiO2 film deposition technique at 390 °C, using tetraethylorthosilicate (TEOS, Si(OC2H5)3) and ozone (O3) as gas sources, with the assistance of tetrafluorocarbon (CF4) plasma pretreatment for TiW or TiN surfaces of wiring top layers. The dielectric constant of SiO2 films can be reduced from 3.9-4.3 to 3.7 at 1 MHz, by the LPD technique or a room temperature chemical vapor deposition (RTCVD) technique using the fluorotrialkoxysilane (FTAS) group and pure water as gas sources. Room temperature film formation can be achieved by the following three techniques: (i) LPD, (ii) RTCVD, and (iii) fluoroalkoxysilane vapor treatment (FAST) for spin-on-glass (SOG).",
keywords = "Dielectric constant, Interlayer dielectric films, Multilevel interconnections, Surface planarization, Ultra large scale integrated circuit (ULSI)",
author = "Tetsuya Homma",
year = "1995",
doi = "10.1016/0254-0584(95)01529-9",
language = "English",
volume = "41",
pages = "234--239",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "4",

}

TY - JOUR

T1 - Future trends for interlayer dielectric films and their formation technologies in ULSI multilevel interconnections

AU - Homma, Tetsuya

PY - 1995

Y1 - 1995

N2 - In the future quarter-micron multilevel interconnections, the interlayer dielectric film properties and their formation techniques will have to meet three requirements: (1) a high surface planarization capability, (2) a low dielectric constant, and (3) a low deposition temperature. In order to achieve these requirements, many technologies have been investigated. Selective deposition of SiO2 films is the best way to achieve full planarization of the interlayer dielectric film surface. Two selective SiO2 film deposition techniques have been developed. One is a liquid phase deposition (LPD) technique at room temperature, using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. The other is a semiselective SiO2 film deposition technique at 390 °C, using tetraethylorthosilicate (TEOS, Si(OC2H5)3) and ozone (O3) as gas sources, with the assistance of tetrafluorocarbon (CF4) plasma pretreatment for TiW or TiN surfaces of wiring top layers. The dielectric constant of SiO2 films can be reduced from 3.9-4.3 to 3.7 at 1 MHz, by the LPD technique or a room temperature chemical vapor deposition (RTCVD) technique using the fluorotrialkoxysilane (FTAS) group and pure water as gas sources. Room temperature film formation can be achieved by the following three techniques: (i) LPD, (ii) RTCVD, and (iii) fluoroalkoxysilane vapor treatment (FAST) for spin-on-glass (SOG).

AB - In the future quarter-micron multilevel interconnections, the interlayer dielectric film properties and their formation techniques will have to meet three requirements: (1) a high surface planarization capability, (2) a low dielectric constant, and (3) a low deposition temperature. In order to achieve these requirements, many technologies have been investigated. Selective deposition of SiO2 films is the best way to achieve full planarization of the interlayer dielectric film surface. Two selective SiO2 film deposition techniques have been developed. One is a liquid phase deposition (LPD) technique at room temperature, using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. The other is a semiselective SiO2 film deposition technique at 390 °C, using tetraethylorthosilicate (TEOS, Si(OC2H5)3) and ozone (O3) as gas sources, with the assistance of tetrafluorocarbon (CF4) plasma pretreatment for TiW or TiN surfaces of wiring top layers. The dielectric constant of SiO2 films can be reduced from 3.9-4.3 to 3.7 at 1 MHz, by the LPD technique or a room temperature chemical vapor deposition (RTCVD) technique using the fluorotrialkoxysilane (FTAS) group and pure water as gas sources. Room temperature film formation can be achieved by the following three techniques: (i) LPD, (ii) RTCVD, and (iii) fluoroalkoxysilane vapor treatment (FAST) for spin-on-glass (SOG).

KW - Dielectric constant

KW - Interlayer dielectric films

KW - Multilevel interconnections

KW - Surface planarization

KW - Ultra large scale integrated circuit (ULSI)

UR - http://www.scopus.com/inward/record.url?scp=0344485193&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344485193&partnerID=8YFLogxK

U2 - 10.1016/0254-0584(95)01529-9

DO - 10.1016/0254-0584(95)01529-9

M3 - Article

AN - SCOPUS:0344485193

VL - 41

SP - 234

EP - 239

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 4

ER -